1
John A Edmond, Gary E Bulman, Hua Shuang Kong, Vladimir Dmitriev: Vertical geometry light emitting diode with group III nitride active layer and extended lifetime. Cree Research, Bell Seltzer Park & Gibson, June 4, 1996: US05523589 (500 worldwide citation)

A light emitting diode emits in the blue portion of the visible spectrum and is characterized by an extended lifetime. The light emitting diode comprises a conductive silicon carbide substrate; an ohmic contact to the silicon carbide substrate; a conductive buffer layer on the substrate and selected ...


2
John A Edmond, Vladimir Dmitriev, Kenneth Irvine: Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices. Cree Research, Bell Seltzer Park & Gibson, February 28, 1995: US05393993 (464 worldwide citation)

A transition crystal structure is disclosed for providing a good lattice and thermal match between a layer of single crystal silicon carbide and a layer of single crystal gallium nitride. The transition structure comprises a buffer formed of a first layer of gallium nitride and aluminum nitride, and ...


3
Calvin H Carter Jr: High efficiency light emitting diodes from bipolar gallium nitride. Cree Research, Bell Seltzer Park & Gibson, May 11, 1993: US05210051 (430 worldwide citation)

The invention is a method of growing intrinsic, substantially undoped single crystal gallium nitride with a donor concentration of 7.times.10.sup.17 cm.sup.-3 or less. The method comprises introducing a source of nitrogen into a reaction chamber containing a growth surface while introducing a source ...


4
John A Edmond, Hua Shuang Kong: Double heterojunction light emitting diode with gallium nitride active layer. Cree Research, Philip Summa Patent Attorney, April 14, 1998: US05739554 (399 worldwide citation)

A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which ...


5
John W Palmour, Hua Shuang Kong, John A Edmond: Method of preparing silicon carbide surfaces for crystal growth. Cree Research, Bell Seltzer Park & Gibson, August 7, 1990: US04946547 (391 worldwide citation)

The invention is a method of forming a substantially planar surface on a monocrystalline silicon carbide crystal by exposing the substantially planar surface to an etching plasma until any surface or subsurface damage caused by any mechanical preparation of the surface is substantially removed. The ...


6
Eric J Tarsa, Brian Thibeault: High output radial dispersing lamp using a solid state light source. Cree Lighting Company, Koppel & Jacobs, February 26, 2002: US06350041 (360 worldwide citation)

The invention provides a new solid state lamp emitting a light useful for room illumination and other applications. It comprises a solid state Light Source which transmits light through a Separator to a Disperser that disperses the light in a desired pattern and/or changes its color. In one embodime ...


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John A Edmond: Blue light emitting diode formed in silicon carbide. Cree Research, Bell Seltzer Park & Gibson, April 17, 1990: US04918497 (346 worldwide citation)

The present invention comprises a light emitting diode formed in silicon carbide and that emits visible light having a wavelength of between about 475-480 nanometers, or between about 455-460 nanometers, or between about 424-428 nanometers. The diode comprises a substrate of alpha silicon carbide ha ...


9
Gerald H Negley: Method for producing high efficiency light-emitting diodes and resulting diode structures. Cree Research, Bell Seltzer Park & Gibson P A, May 20, 1997: US05631190 (309 worldwide citation)

A method of producing light emitting diodes from silicon carbide with increased external efficiency is disclosed which includes directing a beam of laser light at one surface of a portion of silicon carbide, and in which the laser light is sufficient to vaporize the silicon carbide that it strikes t ...


10
John A Edmond: Method of production of light emitting diodes. Cree Research, Bell Seltzer Park & Gibson, October 30, 1990: US04966862 (306 worldwide citation)

The invention is a method for preparing a plurality of light emitting diodes on a single substrate of a semiconductor material. The method is used for structures where the substrate includes an epitaxial layer of the same semiconductor material that in turn comprises layers of p-type and n-type mate ...