1
Bruel Michel: Process for manufacturing thin film layers of semiconductor material.. Commissariat Energie Atomique, March 24, 1993: EP0533551-A1 (132 worldwide citation)

Process for fabricating thin films of single-crystal or polycrystalline semiconductor material characterised in that it consists in subjecting a wafer of a semiconductor material including a flat surface to the following three steps: - a first step of implantation by bombarding (2) the surface (4) o ...


2
Michel Bruel: Process for manufacturing thin film layers of semiconductor material.. Commissariat Energie Atomique, March 19, 1993: FR2681472-A1 (114 worldwide citation)

Process for fabricating thin films of single-crystal or polycrystalline semiconductor material characterised in that it consists in subjecting a wafer of a semiconductor material including a flat surface to the following three steps: - a first step of implantation by bombarding (2) the surface (4) o ...


3
Bruel Michel, Poumeyrol Thierry: Process of manufacturing a structure having a thin semiconductor layer on a substrate. Commissariat Energie Atomique, March 27, 1996: EP0703609-A1 (84 worldwide citation)

Prodn. of a target substrate, coated with an adherent semiconductive thin film, involves (a) coating a first substrate with the thin film which is bonded to the substrate with a bonding energy EO; and (b) transferring the thin film (4) from the first substrate to the target substrate (24) by detachi ...


4
Bruel Michel: Deposition process of semiconductor layers on a support.. Commissariat Energie Atomique, August 2, 1995: EP0665588-A1 (84 worldwide citation)

The process bombards one face (2) of a substrate (1) with ions (6) to create a layer of gaseous micro-bubbles. This layer is intimately joined with the base substrate (10). The area corresponding to the strip of semiconductor required is illuminated with a light beam sufficient to raise the temperat ...


5
Garnier Claude, Roche Roland, Normand Jacques: Improvements in or relating to a process for fixing a tube in a bore. Commissariat Energie Atomique, July 7, 1965: GB997721-A (81 worldwide citation)

997,721. Tube connections. COMMISSARIAT A L'ENERGIE ATOMIQUE. Aug. 23, 1962 [Aug. 25, 1961; June 14, 1962], No. 32410/62. Heading F2G. [Also in Division B3] Boiler and heat exchange tubes may be connected in a fluid-tight manner by a tube expanding process (see Division B3) in which the tube is inse ...


6
Bruel Michel: Method for making a relief structure on a substrate from semiconductor material.. Commissariat Energie Atomique, June 28, 1995: EP0660140-A1 (73 worldwide citation)

The invention relates to a method of producing a relief structure on a substrate (support) made of semiconductor material, consisting in subjecting a wafer (1) of this semiconductor material, having a plane face (2), to the following three steps: - a first step of implantation, by bombarding the pla ...


7
Dubost Rene, Fiori Robert, Seyfried Philippe: Shearing device for irradiated fuel assemblies.. Commissariat Energie Atomique, November 23, 1983: EP0094883-A1 (68 worldwide citation)

L'invention se rapporte à un dispositif de cisaillage d'assemblages combustibles irradiés (A). La lame et la contre-lame assurant le cisaillage sont montés sur des chariots (26, 22) qui peuvent être amenés, ainsi que le chariot serre-flanc (24) appliquant l'assemblage contre la contre-lame, dans une ...


8
Doucet Michel, Rideau Joel: Positioning and guiding device for the blade of a sirurgical saw blade.. Commissariat Energie Atomique, March 6, 1991: EP0415837-A2 (60 worldwide citation)

The invention permits the positioning of a surgical saw blade relative to the bone to be sawn, without bringing this saw blade into contact with any kind of guide. The invention consists in equipping the saw block (8) with a retractable slide (20) and in equipping the positioning guide (16) with a s ...


9
Aspar Bernard, Bruel Michel, Poumeyrol Thierry: Method of manufacturing a thin semiconductor layer. Commissariat Energie Atomique, November 19, 1997: EP0807970-A1 (57 worldwide citation)

Producing a thin semiconductor layer from a wafer involves: (a) implanting noble gas or hydrogen ions through a flat face (2) of the wafer at a dose causing formation of micro-cavities which weaken the wafer along a reference plane without causing wafer separation; and (b) separating the wafer into ...


10
Meyer Robert: Display device using field emission excited cathode luminescence.. Commissariat Energie Atomique, February 19, 1986: EP0172089-A1 (56 worldwide citation)

1. Display unit comprising a plurality of elementary patterns each having an anode (20) comprising a cathodoluminescent layer (34), and a cathode (18) able to emit electrons, each cathode comprising a plurality of electrically interconnected micropoints (22) subject to an electron emission by field ...



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