1
Michel Bruel: Process for the production of thin semiconductor material films. Commissariat A l Energie Atomique, Pearne Gordon McCoy & Granger, December 20, 1994: US05374564 (852 worldwide citation)

Process for the preparation of thin moncrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar face to the three following stages: a first stage of implantation by bombardment (2) of the face (4) of the ...


2
Michel Borel, Jean Francois Boronat, Robert Meyer, Philippe Rambaud: Electron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission using said source. Commissariat a l Energie Atomique, July 10, 1990: US04940916 (357 worldwide citation)

Electron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission and using said source. Each cathode (5) comprises an electrically conductive layer (22) and micropoints (12) and, according to the invention, a continuous resistive layer (24) is prov ...


3
Daniel Bainville, Fran cedilla ois Laval, Raymond Roy Camille deceased, Gerard Saillant, Fran cedilla ois Lavaste: Intervertebral disk prosthesis. Commissariat a l Energie Atomique, Universite Pierre et Marie Curie, Hayes Soloway Hennessey Grossman & Hage P C, October 7, 1997: US05674294 (290 worldwide citation)

A disk prosthesis for replacing a damaged spinal disk has two metal half-envelopes which confine between them a compression cushion having a controlled differential compression. The structure employs a membrane or diaphragm surrounding the compression cushion in order to insure a seal between the cu ...


4
Bernard Aspar, Michel Bruel, Thierry Poumeyrol: Method of producing a thin layer of semiconductor material. Commissariat a l Energie Atomique, Hayes Soloway Hennessey Grossman & Hage P C, February 1, 2000: US06020252 (243 worldwide citation)

A thin layer of semiconductor material is produced by implanting ions through a flat face of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face. The resulting wafer is then subject ...


5
Jean Frederic Clerc, Jean Claude Deutsch, Pierre Vaudaine, Sylvie Vey: Liquid crystal cell using the electrically controlled birefringence effect and a uniaxial medium of negative optical anisotropy usable therein. Commissariat A l Energie Atomique, James E Nilles, Donald C McGaughey, December 26, 1989: US04889412 (217 worldwide citation)

Liquid crystal cell using the electrically controlled birefringence effect and processes for the production of the cell and a uniaxial medium or material of negative optical anistropy usable therein.


6
Michel Bruel: Process for the manufacture of thin films of semiconductor material. Commissariat a l Energie Atomique, Oblon Spivak McClelland Maier & Neustadt P C, February 3, 1998: US05714395 (213 worldwide citation)

The process includes the following steps: implantation of ions (12) in a semi-conducting wafer (10), to create a cleavage layer of gaseous microblisters (16) in the wafer, heat treatment of the wafer, in order to cause separation of a surface layer (18) from the rest of the wafer, along the layer of ...


7
Bernard Picard: Method for the scanning confocal light-optical microscopic and indepth examination of an extended field and devices for implementing said method. Commissariat a l Energie Atomique, October 23, 1990: US04965441 (181 worldwide citation)

Method for the scanning confocal light-optical microscopic and in-depth examination of an extended field and devices for implementing said method. The method consists of forming a principal luminous beam made up of a plurality of secondary luminous beams distinguished from each other by means of at ...


8
Robert Meyer: Electron source with microtip emissive cathodes. Commissariat A L Energie Atomique, Pearne Gordon McCoy & Granger, March 16, 1993: US05194780 (157 worldwide citation)

Electron source with microtip emissive cathodes having grating-like electrodes. These electrodes can either be cathode conductors (5) or grids (10). Specific application to the excitation of a display screen.


9
Bernard Aspar, Beatrice Biasse, Michel Bruel: Method of obtaining a thin film of semiconductor material. Commissariat a l Energie Atomique, Hayes Soloway Hennessey Grossman & Hage PC, August 15, 2000: US06103597 (156 worldwide citation)

A method of obtaining a thin film from a substrate made of semiconductor material, the thin film including at least one element on one face of the substrate made of a material different from the semiconductor material, and conferring to the thin film a heterogeneous structure. The method includes im ...


10
Patrice Deroux Dauphin, Henri Sibuet, Thierry Dupeux: Process for producing electrical connections through a substrate. Commissariat a l Energie Atomique, Compagnie Europeenne de Composants Electroniques LCC, Oblon Spivak McClelland Maier & Neustadt, October 23, 1990: US04964212 (154 worldwide citation)

According to the invention, blind holes (27) and not through-holes are produced. For this purpose, the substrate (10) to be pierced or perforated is previously covered with a layer (12) less absorbing for the laser perforating beam (26) than the substrate.



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