1
Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J: Passive elements in mram embedded integrated circuits. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J, KING Robert L, March 8, 2007: WO/2007/027381 (113 worldwide citation)

An integrated circuit device (300) comprises a substrate (301) and MRAM architecture (314) formed on the substrate (308). The MRAM architecture (314) includes a MRAM circuit (318) formed on the substrate (301); and a MRAM cell (316) coupled to and formed above the MRAM circuit (318). Additionally a ...


2
Mather Phillip, Chung Young Sir, Engel Bradley N: Improved magnetic sensor design for suppression of barkhausen noise. Mather Phillip, Chung Young Sir, Engel Bradley N, Everspin Technologies, KOCH William, October 1, 2009: WO/2009/120894 (6 worldwide citation)

A semiconductor process and apparatus provide a high-performance magnetic field sensor from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216), where each differential sensor (e.g., 201) is formed from a Wheatstone bridge structure with four uns ...


3
Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J, Zuo Jiang Kai: Magnetic tunnel junction current sensors. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J, Zuo Jiang Kai, KING Robert L, May 10, 2007: WO/2007/053340

An integrated circuit device (600) is provided which includes an active circuit component (604, 804) and a current sensor (602, 802). The active circuit component (604, 804) may be coupled between a first conductive layer (206) and a second conductive layer (210), and is configured to produce a firs ...


4
Chung Young Sir, Baird Robert W, Durlam Mark A: Methods of implementing magnetic tunnel junction current sensors. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, KING Robert L, May 10, 2007: WO/2007/053341

An integrated circuit device (800) is provided which comprises a substrate (801), a conductive line (807) configured to experience a pressure, and a magnetic tunnel junction ('MTJ') core (802) formed between the substrate and the current line. The conductive line (807) is configured to move in respo ...


5
Chung Young Sir, Baird Robert W, Durlam Mark A: Magnetic tunnel junction temperature sensors. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, KING Robert L, April 12, 2007: WO/2007/041007

An integrated circuit device (600) is provided which includes a heat source (604) disposed in a substrate (602), and a Magnetic Tunnel Junction ('MTJ') temperature sensor (608) disposed over the heat source.


6
Chung Young Sir, Baird Robert W, Durlam Mark A: Magnetic tunnel junction temperature sensors and methods. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, KING Robert L, April 12, 2007: WO/2007/040991

Techniques of sensing a temperature of a heat source disposed in a substrate of an integrated circuit (600) are provided. According to one exemplary method, a Magnetic Tunnel Junction ('MTJ') temperature sensor (608) is provided over the heat source (604). The MTJ temperature sensor comprises an MTJ ...


7
Chung Young Sir, Baird Robert W, Durlam Mark A, Engel Bradley N: 3-d inductor and transformer devices in mram embedded integrated circuits. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, Engel Bradley N, KING Robert L, December 14, 2006: WO/2006/132750

An integrated circuit device (300) includes a magnetic random access memory ('MRAM') architecture (310) and at least one inductance element (3 12, 3 14) formed on the same substrate using the same fabrication process technology. The inductance element, which may be an inductor or a transformer, is f ...


8
Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J: Mram embedded smart power integrated circuits. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J, KING Robert L, January 11, 2007: WO/2007/005303

An integrated circuit device (300) includes a magnetic random access memory ('MRAM') architecture and a smart power integrat circuit architecture formed on the same substrate (302) using the same fabrication process technology The fabrication process technology is a modular process having a front en ...


9
Chung Young Sir, Baird Robert W, Grynkewich Gregory W: Method for tunnel junction sensor with magnetic cladding. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Grynkewich Gregory W, KING Robert L, February 8, 2007: WO/2007/016009

Methods and apparatus are provided for sensing physical parameters. The apparatus (30) comprises a magnetic tunnel junction (MTJ) [32] and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. A magnetic s ...


10
Chung Young Sir, Baird Robert W: Tunnel junction sensor with magnetic cladding. Freescale Semiconductor, Chung Young Sir, Baird Robert W, KING Robert L, February 8, 2007: WO/2007/016010

Methods and apparatus are provided for sensing physical parameters. The apparatus (30) comprises a magnetic tunnel junction (MTJ) [32] and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. A magnetic s ...