1
House Kurt Z, House Christopher H, Aziz Michael J, Schrag Daniel Paul: Carbon dioxide capture and related processes. President And Fellows Of Harvard College, The Penn State Research Foundation, House Kurt Z, House Christopher H, Aziz Michael J, Schrag Daniel Paul, WALAT Robert H, February 14, 2008: WO/2008/018928 (51 worldwide citation)

Processes for capturing carbon dioxide are described. The carbon dioxide may be captured from the atmosphere and/or from the waste stream of a carbon dioxide point source (e.g., power plants, chemical plants, natural gas fields, oil fields, industrial sites, etc.). The processes can involve capturin ...


2
MONDAL Sujit Kumar, RUGOLO Jason S, HUSKINSON Brian, AZIZ Michael J: Oxydes complexes pour électrodes catalytiques, Complex oxides for catalytic electrodes. President And Fellows Of Harvard College, MONDAL Sujit Kumar, RUGOLO Jason S, HUSKINSON Brian, AZIZ Michael J, KIM Elizabeth, January 12, 2012: WO/2012/006479 (3 worldwide citation)

A catalytic electrode may include a complex oxide deposited on a substrate. The complex oxide maybe an oxide of an alloy of ruthenium and another less expensive metal, including without limitation cobalt and manganese. The percentage of ruthenium in the complex oxide can be reduced to about 20 perce ...


3
Bao Jiming, Tabbal Malek, Aziz Michael J, Kim Taegon, Charnvanichborikarn Supakit, Williams James S, Capasso Federico: A point defect engineered si light-emitting diode at 1.218 &mgr;m. President And Fellows Of Harvard College, Bao Jiming, Tabbal Malek, Aziz Michael J, Kim Taegon, Charnvanichborikarn Supakit, Williams James S, Capasso Federico, CONNORS Matthew E, May 29, 2008: WO/2008/063985

A light-emitting device (LED) includes a first semiconductor layer comprising of n-type dope materials. A second semiconductor layer includes p-type dope materials. An active region is positioned between the first and second semiconductor layers. The active region includes Si self-interstitials used ...



Click the thumbnails below to visualize the patent trend.