1
Baba Ali Nabila, Kreuzer Justin, Sewell Harry: Lithographic printing with polarized light. Asml Holding, Baba Ali Nabila, Kreuzer Justin, Sewell Harry, MESSINGER Michael V, September 10, 2004: WO/2004/077154 (387 worldwide citation)

The present invention provides systems and methods for improved lithographic printing with polarized light. In embodiments of the present invention, polarized light (radially or tangentially polarized) is used to illuminate a phase-shift mask (PSM) and produce an exposure beam. A negative photoresis ...


2
Harry Sewell: Method and system for dual reticle image exposure. ASML Holding, Sterne Kessler Goldstein & Fox PLLC, August 26, 2003: US06611316 (289 worldwide citation)

The present invention provides a method and system for simultaneously imaging at least two reticles onto a substrate. According to the present invention, the wafer is passed through the exposure sequence once with images from the reticles being exposed simultaneously onto the wafer. The throughput o ...


3
Herman Vogel, Klaus Simon, Antonius Theodorus Anna Maria Derksen: Immersion photolithography system and method using microchannel nozzles. ASML Holding, Sterne Kessler Goldstein & Fox P L L C, March 15, 2005: US06867844 (238 worldwide citation)

A liquid immersion photolithography system includes an exposure system that exposes a substrate with electromagnetic radiation and includes a projection optical system that focuses the electromagnetic radiation on the substrate. A liquid supply system provides liquid flow between the projection opti ...


4
Nabila Baba Ali: Method for the generation of variable pitch nested lines and/or contact holes using fixed size pixels for direct-write lithographic systems. ASML Holding, Sterne Kessler Goldstein & Fox PLLC, June 20, 2006: US07063920 (190 worldwide citation)

Provided is a method and system for developing a lithographic mask layout. The lithographic mask layout is adapted for configuring an array of micro-mirrors in a maskless lithography system. The method includes generating an ideal mask layout representative of image characteristics associated with a ...


5
Vogel Herman, Simon Klaus, Derksen Antonius Theodorus Ann: Immersion photolithography system comprising microchannel nozzles. Asml Holding, December 22, 2004: EP1489462-A2 (156 worldwide citation)

A liquid immersion photolithography system includes an exposure system that exposes a substrate with electromagnetic radiation and includes a projection optical system (100) that focuses the electromagnetic radiation on the substrate (101). A liquid supply system provides liquid flow between the pro ...


6
Harry Sewell: Immersion photolithography system and method using inverted wafer-projection optics interface. ASML Holding, Sterne Kessler Goldstein & Fox P L L C, October 26, 2004: US06809794 (137 worldwide citation)

A liquid immersion photolithography system includes an exposure system that exposes a substrate with electromagnetic radiation, and also includes a projection optical system that focuses the electromagnetic radiation on the substrate. A liquid supply system provides a liquid between the projection o ...


7
Santiago E del Puerto: System and method of measuring thermal expansion. ASML Holding, Sterne Kessler Goldstein & Fox P L L C, April 11, 2006: US07025498 (92 worldwide citation)

A chuck having a high specific stiffness and high thermal conductivity compared to conventional chucks, with an apparatus for measuring thermal expansion in the chuck. High specific stiffness allows for a higher control bandwidth and improved scanning performance. High thermal conductivity enables e ...


8
Bleeker Arno Jan, Baselmans Johannes Jacobus Mat, Dierichs Marcel Mathhijs Theod, Wagner Christian, Ryzhikov Lev, Smirnov Stanislav Y, Troost Kars Zeger: Lithographic apparatus and device manufacturing method. Asml Netherlands, Asml Holding, June 28, 2006: EP1674935-A2 (61 worldwide citation)

A system and method are used to direct a radiation beam to illuminate non-perpendicularly a patterning array of individually controllable elements used for patterning the radiation beam. The individually controllable elements can change a telecentricity of the radiation beam. Projection of the radia ...


9
Justin L Kreuzer: Optical reduction system with control of illumination polarization. ASML Holding, Sterne Kessler Goldstein & Fox PLLC, January 20, 2004: US06680798 (47 worldwide citation)

An optical reduction system with polarization dose sensitive output for use in the photolithographic manufacture of semiconductor devices having variable compensation for reticle retardation before the long conjugate end. The variable compensation component(s) before the reticle provides accurate ad ...


10
Justin L Kreuzer: Optical reduction system with control of illumination polarization. ASML Holding, Sterne Kessler Goldstein & Fox P L L C, July 3, 2007: US07239446 (41 worldwide citation)

An optical reduction system with polarization dose sensitive output for use in the photolithographic manufacture of semiconductor devices having variable compensation for reticle retardation before the long conjugate end. The variable compensation component(s) before the reticle provides accurate ad ...