1
Christiaan J Werkhoven, Ivo Raaijmakers, Suvi P Haukka: Method of forming graded thin films using alternating pulses of vapor phase reactants. ASM Microchemistry Oy, Knobbe Martens Olson & Bear, March 18, 2003: US06534395 (443 worldwide citation)

Thin films are formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cycli ...


2
Pekka J Soininen, Kai Erik Elers, Suvi Haukka: Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH. ASM Microchemistry Oy, Knobbe Martens Olson & Bear, November 19, 2002: US06482740 (286 worldwide citation)

This invention relates to manufacturing of integrated circuits (ICs) and especially conductive layers suitable for use in an IC. According to the preferred method a metal oxide thin film is deposited on a substrate surface and reduced thereafter essentially into a metallic form with an organic reduc ...


3
Alessandra Satta, Karen Maex, Kai Erik Elers, Ville Antero Saanila, Pekka Juha Soininen, Suvi P Haukka: Method for bottomless deposition of barrier layers in integrated circuit metallization schemes. Interuniversitair Microelektronica Centrum, ASM Microchemistry OY, Knobbe Martens Olson & Bear, May 21, 2002: US06391785 (283 worldwide citation)

Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the m ...


4
Kai Erik Elers, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen: Production of elemental thin films using a boron-containing reducing agent. ASM Microchemistry Oy, Knobbe Martens Olson & Bear, November 5, 2002: US06475276 (247 worldwide citation)

The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vap ...


5
Ivo Raaijmakers, Pekka T Soininen, Ernst H A Granneman, Suvi P Haukka: Protective layers prior to alternating layer deposition. ASM Microchemistry Oy, Knobbe Martens Olson & Bear, November 19, 2002: US06482733 (243 worldwide citation)

Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of the trenches and vias are blocked, and then t ...


6
Mikko Ritala, Antti Rahtu, Markku Leskela, Kaupo Kukli: Method for growing thin oxide films. ASM Microchemistry Oy, Knobbe Martens Olson & Bear, October 14, 2003: US06632279 (237 worldwide citation)

A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halid ...


7
Kai Erik Elers, Suvi P Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen: Deposition of transition metal carbides. ASM Microchemistry Oy, Knobbe Martens Olson & Bear, November 19, 2002: US06482262 (188 worldwide citation)

The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source co ...


8
Ritala Mikko, Rahtu Antti, Leskelae Markku, Kukli Kaupo: Method of growing oxide thin film. Asm Microchemistry Oy, June 26, 2001: JP2001-172767 (172 worldwide citation)

PROBLEM TO BE SOLVED: To provide a method of growing an oxide thin film on a substrate.SOLUTION: In the method of growing an oxide thin film according to the principle of the ALD method where an oxide thin film is deposited onto a substrate by an alternating surface reaction of metallic raw material ...


9
Ville Antero Saanila, Kai Erik Elers, Sari Johanna Kaipio, Pekka Juha Soininen: Process for growing metalloid thin films utilizing boron-containing reducing agents. ASM Microchemistry Oy, Knobbe Martens Olson & Bear, July 29, 2003: US06599572 (140 worldwide citation)

A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the metal source material to a reduced state are vaporized and fed into a reaction space, where the metal sou ...


10
Matti Putkonen: Process for producing oxide thin films. ASM Microchemistry Oy, Knobbe Martens Olson & Bear, April 15, 2003: US06548424 (121 worldwide citation)

This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapor-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrat ...