1
Robert Brennan Milligan, Fred Alokozai: Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same. ASM IP Holding, Snell & Wilmer, May 12, 2015: US09029253 (63 worldwide citation)

Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films include a matrix material and a phase stabilizer, which provides a morphologically stabilizing effect to a ...


2
Michael Halpin, Eric Shero, Carl White, Fred Alokozai, Jerry Winkler, Todd Dunn: Chamber sealing member. ASM IP Holding, Snell & Wilmer, April 14, 2015: US09005539 (63 worldwide citation)

A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the low ...


3
Sung Hoon Jung, Petri Raisanen, Eric Jen Cheng Liu, Mike Schmotzer: Method and system to reduce outgassing in a reaction chamber. ASM IP Holding, Snell & Wilmer, March 31, 2015: US08993054 (63 worldwide citation)

Systems and methods of reducing outgassing of a substance within a reaction chamber of a reactor are disclosed. Exemplary methods include depositing a barrier layer within the reaction chamber and using a scavenging precursor to react with species on a surface of the reaction chamber. Exemplary syst ...


4
Robert Brennan Milligan, Fred Alokozai: Semiconductor reaction chamber with plasma capabilities. ASM IP Holding, Snell & Wilmer, April 28, 2015: US09018111 (62 worldwide citation)

A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the p ...


5
Atsuki Fukazawa, Takahiro Oka: Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control. ASM IP Holding, Snell & Wilmer L, May 13, 2014: US08722546 (61 worldwide citation)

A method of forming a dielectric film having Si—C bonds and/or Si—N bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a Si-containing precursor and a reactan ...


6
Julien Beynet, Ivo Raaijmakers, Atsuki Fukazawa: Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment. ASM IP Holding, Snell & Wilmer, May 5, 2015: US09023737 (60 worldwide citation)

A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and hea ...


7
Yosuke Kimura: Method for repairing damage of dielectric film by hydrocarbon restoration and hydrocarbon depletion using UV irradiation. ASM IP Holding, Snell & Wilmer L, September 17, 2013: US08535767 (58 worldwide citation)

A method for repairing process-related damage of a dielectric film formed on a substrate caused by processing the dielectric film includes: irradiating the damaged dielectric film with UV light in an atmosphere of hydrocarbon-containing gas to restore the surface of the dielectric film; and irradiat ...


8
Todd Dunn, Carl White, Michael Halpin, Eric Shero, Jerry Winkler: Susceptor heater shim. ASM IP Holding, Snell & Wilmer, December 1, 2015: US09202727 (53 worldwide citation)

A substrate supporting assembly in a reaction space includes a heater, a substrate support member, and a shim positioned between the heater and the substrate support member. The shim may be removably secured between the heater and the substrate support member. The shim may further include an inner s ...


9
Jerry Chen, Vladimir Machkaoutsan, Brennan Milligan, Jan Willem Maes, Suvi Haukka, Eric Shero, Tom E Blomberg, Dong Li: Silane and borane treatments for titanium carbide films. ASM IP Holding, Knobbe Martens Olson & Bear, September 23, 2014: US08841182 (53 worldwide citation)

Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film including titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of d ...


10
Akinori Nakano, Shintaro Ueda, Dai Ishikawa, Kiyohiro Matsushita: Method for treating SiOCH film with hydrogen plasma. ASM IP Holding, Snell & Wilmer, May 12, 2015: US09029272 (53 worldwide citation)

A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the S ...