1
Matthias Bauer
Matthias Bauer: Epitaxial deposition of doped semiconductor materials. ASM America, Knobbe Martens Olson & Bear, January 4, 2011: US07863163 (80 worldwide citation)

A method for depositing a carbon doped epitaxial semiconductor layer comprises maintaining a pressure of greater than about 700 torr in a process chamber housing a patterned substrate having exposed single crystal material. The method further comprises providing a flow of a silicon source gas to the ...


2
Matthias Bauer
Matthias Bauer: Deposition of silicon germanium on silicon-on-insulator structures and bulk substrates. ASM America, Knobbe Martens Olson & Bear, April 24, 2007: US07208354 (76 worldwide citation)

Methods are provided for producing SiGe-on-insulator structures and for forming strain-relaxed SiGe layers on silicon while minimizing defects. Amorphous SiGe layers are deposited by CVD from trisilane and GeH4. The amorphous SiGe layers are recrystallized over silicon by melt or solid phase epitaxy ...


3
Matthias Bauer
Matthias Bauer, Shawn G Thomas: Cyclical epitaxial deposition and etch. ASM America, Knobbe Martens Olson & Bear, February 5, 2013: US08367528 (60 worldwide citation)

Methods for selectively depositing high quality epitaxial material include introducing pulses of a silicon-source containing vapor while maintaining a continuous etchant flow. Epitaxial material is deposited on areas of a substrate, such as source and drain recesses. Between pulses, the etchant flow ...


4
Matthias Bauer
Matthias Bauer, Keith Doran Weeks: Selective epitaxial formation of semiconductor films. ASM America, Knobbe Martens Olson & Bear, October 2, 2012: US08278176 (56 worldwide citation)

Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material over insulating regions, such as field oxide, and the selective etch phases preferentially remove no ...


5
Matthias Bauer
Matthias Bauer, Pierre Tomasini: Inhibitors for selective deposition of silicon containing films. ASM America, Knobbe Martens Olson & Bear, May 10, 2011: US07939447 (33 worldwide citation)

A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between th ...


6
Matthias Bauer
Paul D Brabant, Joseph P Italiano, Chantal J Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer: Epitaxial semiconductor deposition methods and structures. ASM America, Knobbe Martens Olson & Bear, July 3, 2007: US07238595 (24 worldwide citation)

Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retr ...


7
Matthias Bauer
Matthias Bauer, Keith Doran Weeks, Pierre Tomasini, Nyles Cody: Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition. ASM America, Knobbe Martens Olson & Bear, October 21, 2008: US07438760 (21 worldwide citation)

Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 at ...


8
Matthias Bauer
Matthias Bauer, Chantal Arena, Ronald Bertram, Pierre Tomasini, Nyles Cody, Paul Brabant, Joseph Italiano, Paul Jacobson, Keith Doran Weeks: Selective deposition of silicon-containing films. ASM America, Knobbe Martens Olson & Bear, October 19, 2010: US07816236 (19 worldwide citation)

Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si- ...


9
Matthias Bauer
Matthias Bauer, Paul Brabant, Trevan Landin: Germanium deposition. ASM America, Knobbe Martens Olson & Bear, February 12, 2008: US07329593 (18 worldwide citation)

A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing the seed layer, increasing the tempera ...


10
Matthias Bauer
Paul D Brabant, Joseph P Italiano, Chantal J Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer: Epitaxial semiconductor deposition methods and structures. ASM America, Knobbe Martens Olson & Bear, October 3, 2006: US07115521 (11 worldwide citation)

Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retr ...



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