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Kimura Yoshikatsu, Ninomiya Yoshiki, Shirodono Kiyosumi, Nishimura Yoshihiro, Yamasato Takanari, Arai Shintaro, Fujii Toshiaki, Marumichi Tomohiro, Tanimoto Masayuki: Optical transmitting device, optical receiving device, and optical communication system. Toyota Central R&Amp D Labs, Yamasato Takanari, Arai Shintaro, Fujii Toshiaki, Marumichi Tomohiro, Tanimoto Masayuki, April 23, 2009: JP2009-088704 (53 worldwide citation)

PROBLEM TO BE SOLVED: To accurately perform data communication by allowing a reception side to specify the respective positions of light emitting elements.SOLUTION: An optical transmitting device blinks an LED array with blinking patterns consisting of a lighting pattern of whole lighting, a lightin ...


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Masuoka Fujio, Arai Shintaro: (Ja) 半導体装置およびその製造方法, (En) Semiconductor device, and method for manufacturing the same. Unisantis Electronics, Masuoka Fujio, Arai Shintaro, KUMAKURA Yoshio, August 6, 2009: WO/2009/096464 (30 worldwide citation)

(EN) Provided is a semiconductor device having a circuit, in which either a drain or source of a first MOS transistor and either a drain or source of a second MOS transistor are connected. The semiconductor device comprises a substrate, an insulating film over the substrate, and a planar semiconduct ...


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Masuoka Fujio, Arai Shintaro: (Ja) 半導体記憶装置, (En) Semiconductor storage device. Unisantis Electronics, Masuoka Fujio, Arai Shintaro, KUMAKURA Yoshio, August 6, 2009: WO/2009/096465 (28 worldwide citation)

(EN) A CMOS-type 6T-SRAM device is composed of vertical transistors (SGT), and in the device, a small SRAM cell area and a stable operation margin are achieved. In a static-type memory cell configured by using six MOS transistors, the MOS transistors configuring the memory cell are formed on a plana ...


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Masuoka Fujio, Arai Shintaro: (Ja) 半導体装置の製造方法, (En) Fabrication process of semiconductor device. Unisantis Electronics, Masuoka Fujio, Arai Shintaro, KUMAKURA Yoshio, August 6, 2009: WO/2009/096470 (25 worldwide citation)

(EN) Disclosed is a fabrication process of a semiconductor device comprising a step of preparing a substrate on top of which at least one columnar semiconductor layer is formed at least partially, a step of forming a first insulating film at least partially on top of the substrate including at least ...


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Masuoka Fujio, Arai Shintaro: (Ja) 半導体記憶装置, (En) Semiconductor storage device. Unisantis Electronics, Masuoka Fujio, Arai Shintaro, KUMAKURA Yoshio, August 6, 2009: WO/2009/096466 (22 worldwide citation)

(EN) A Loadless 4T-SRAM device is composed of vertical transistors (SGT), and in the device, a small SRAM cell area and a stable operation margin are achieved. In a static-type memory cell configured by using four MOS transistors, the MOS transistors configuring the memory cell are formed on a plana ...


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Masuoka Fujio, Arai Shintaro: (Ja) 半導体装置およびその製造方法, (En) Semiconductor device and its manufacturing method. Unisantis Electronics, Masuoka Fujio, Arai Shintaro, KUMAKURA Yoshio, August 6, 2009: WO/2009/095997 (21 worldwide citation)

(EN) A semiconductor device including a circuit in which either a drain or a source of a first MOS transistor and either a drain or a source of a second MOS transistor are connected. The semiconductor device is characterized by comprising a substrate, an insulating film on the substrate, and a plana ...


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Masuoka Fujio, Nakamura Hiroki, Kudo Tomohiko, Arai Shintaro: (en) Semiconductor device manufacturing method(ja) 半導体装置の製造方法. Unisantis Electronics, Masuoka Fujio, Nakamura Hiroki, Kudo Tomohiko, Arai Shintaro, KUMAKURA Yoshioet al, August 20, 2009: WO/2009/102059 (21 worldwide citation)

(EN) A semiconductor device manufacturing method includes a step of forming a columnar first conductivity type semiconductor layer on a flat semiconductor layer; a step of forming a second conductivity type semiconductor layer on the flat semiconductor layer under the first conductivity type semicon ...


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Masuoka Fujio, Arai Shintaro: (Ja) 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法, (En) Semiconductor storage device and memory embedded semiconductor device, and manufacturing method thereof. Unisantis Electronics, Masuoka Fujio, Arai Shintaro, KUMAKURA Yoshio, August 6, 2009: WO/2009/096001 (21 worldwide citation)

(EN) A semiconductor storage device in which a memory cell portion and a peripheral circuit portion are configured by using MOS transistors, comprising a substrate, an insulating film on the substrate, and a planar semiconductor layer formed on the insulating film on the substrate. In this case, at ...


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Masuoka Fujio, Kudo Tomohiko, Arai Shintaro, Nakamura Hiroki: (en) Method for manufacturing semiconductor device(ja) 半導体装置の製造方法. Unisantis Electronics, Masuoka Fujio, Kudo Tomohiko, Arai Shintaro, Nakamura Hiroki, KUMAKURA Yoshioet al, September 11, 2009: WO/2009/110050 (11 worldwide citation)

(EN) An object is to provide a method for manufacturing an SGT for obtaining a structure for reducing the resistance of a source, a drain, and a gate, a desired gate length, desired shapes of the source and the drain, and a desired diameter of a pillar-shaped semiconductor. The method comprises the ...


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Masuoka Fujio, Kudo Tomohiko, Arai Shintaro, Nakamura Hiroki: (en) Semiconductor device manufacturing method(ja) 半導体装置の製造方法. Unisantis Electronics, Masuoka Fujio, Kudo Tomohiko, Arai Shintaro, Nakamura Hiroki, KUMAKURA Yoshioet al, August 20, 2009: WO/2009/102061 (10 worldwide citation)

(EN) Provided is an SGT manufacturing method by which a structure for reducing resistances of a source, a drain and a gate, and desired gate length, source and drain shapes and diameter of a columnar semiconductor are obtained. The method includes a step of forming the columnar semiconductor layer o ...