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Shalvi Ofir, Sommer Naftali, Gurgi Eyal, Maislos Ariel: Distortion estimation and cancellation in memory devices. Anobit Technologies, Shalvi Ofir, Sommer Naftali, Gurgi Eyal, Maislos Ariel, SANFORD T COLB PO Box 2273 76122 Rehovot, November 22, 2007: WO/2007/132453 (132 worldwide citation)

A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling ...


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Dotan Sokolov, Gil Semo, Ofir Shalvi: Memory device with reduced reading latency. Anobit Technologies, Darby & Darby P C, September 22, 2009: US07593263 (113 worldwide citation)

A method for data storage includes providing a memory, which includes first memory cells having a first reading latency and second memory cells having a second reading latency that is higher than the first reading latency. An item of data intended for storage in the memory is divided into first and ...


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Naftali Sommer, Ofir Shalvi: Reducing programming error in memory devices. Anobit Technologies, Darby & Darby P C, April 13, 2010: US07697326 (105 worldwide citation)

A method for storing data in an array (28) of analog memory cells (32) includes defining a constellation of voltage levels (90A, 90B, 90C, 90D) to be used in storing the data. A part of the data is written to a first analog memory cell in the array by applying to the analog memory cell a first volta ...


4
Naftali Sommer, Ofir Shalvi, Dotan Sokolov: Reading memory cells using multiple thresholds. Anobit Technologies, Fish & Richardson P C, July 5, 2011: US07975192 (103 worldwide citation)

A method for operating a memory (28) includes storing data, which is encoded with an Error Correction Code (ECC), in analog memory cells (32) of the memory by writing respective analog input values selected from a set of nominal values to the analog memory cells. The stored data is read by performin ...


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Ofir Shalvi, Zeev Cohen, Dotan Sokolov: Adaptive programming of analog memory cells using statistical characteristics. Anobit Technologies, Darby & Darby P C, April 27, 2010: US07706182 (103 worldwide citation)

A method for storing data in a memory that includes a plurality of analog memory cells includes mapping the data to programming values, which are selected from a set of nominal programming values. The set of nominal programming values includes at least a first nominal programming value and a second ...


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Ofir Shalvi, Naftali Sommer: Memory device programming using combined shaping and linear spreading. Anobit Technologies, Darby & Darby PC, December 16, 2008: US07466575 (103 worldwide citation)

A method for data storage includes accepting data for storage in a memory (28) that includes multiple analog memory cells (32). The data is converted to input values. The input values are filtered using a non-linear filtering operation to produce respective shaped values, and the shaped values are c ...


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Shalvi Ofir, Sommer Naftali, Maislos Ariel, Sokolov Dotan: Combined distortion estimation and error correction coding for memory devices. Anobit Technologies, Shalvi Ofir, Sommer Naftali, Maislos Ariel, Sokolov Dotan, SANFORD T COLB PO Box 2273 76122 Rehovot, November 22, 2007: WO/2007/132457 (103 worldwide citation)

A method for operating a memory device (24) includes encoding data using an Error Correction Code (ECC) and storing the encoded data as first analog values in respective analog memory cells (32) of the memory device. After storing the encoded data, second analog values are read from the respective m ...


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Sommer Naftali, Shalvi Ofir, Perlmutter Uri, Sokolov Dotan, Golov Oren, Gurgi Eyal, Anholt Micha: Adaptive estimation of memory cell read thresholds. Anobit Technologies, Sommer Naftali, Shalvi Ofir, Perlmutter Uri, Sokolov Dotan, Golov Oren, Gurgi Eyal, Anholt Micha, SANFORD T COLB PO Box 2273 76122 Rehovot, September 18, 2008: WO/2008/111058 (91 worldwide citation)

A method for operating a memory (28) that includes a plurality of analog memory cells (32) includes storing data in the memory by writing first storage values to the cells. Second storage values are read from the cells, and a Cumulative Distribution Function (CDF) of the second storage values is est ...


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Sommer Naftali, Shalvi Ofir: Reducing programming error in memory devices. Anobit Technologies, Sommer Naftali, Shalvi Ofir, SANFORD T COLB PO Box 2273 76122 Rehovot, November 22, 2007: WO/2007/132452 (88 worldwide citation)

A method for storing data in an array (28) of analog memory cells (32) includes defining a constellation of voltage levels (90A, 90B, 90C, 90D) to be used in storing the data. A part of the data is written to a first analog memory cell in the array by applying to the analog memory cell a first volta ...


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Sokolov Dotan, Sommer Naftali, Shalvi Ofer, Perlmutter Uri: Memory device with internal signal processing unit. Anobit Technologies, Sokolov Dotan, Sommer Naftali, Shalvi Ofer, Perlmutter Uri, SANFORD T COLB PO Box 2273 76122 Rehovot, November 20, 2008: WO/2008/139441 (88 worldwide citation)

A method for operating a memory (36) includes storing data in a plurality of analog memory cells (40) that are fabricated on a first semiconductor die by writing input storage values to a group of the analog memory cells. After storing the data, multiple output storage values are read from each of t ...