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Nakayama Tatsuo, Miyamoto Hironobu, Ando Yuji, Kuzuhara Masaaki, Okamoto Yasuhiro, Inoue Takashi, Hataya Koji: (Ja) 半導体装置, (En) Semiconductor device. Nec Corporation, The Furukawa Electric, Nakayama Tatsuo, Miyamoto Hironobu, Ando Yuji, Kuzuhara Masaaki, Okamoto Yasuhiro, Inoue Takashi, Hataya Koji, MIYAZAKI Teruo, January 5, 2006: WO/2006/001369 (10 worldwide citation)

(EN) There is provided a semiconductor device capable of suppressing current collapse, dielectric voltage, and lowering of gain, so as to enabling high-voltage operation and realizing an ideal high output. On a substrate (101), there are formed a buffer layer (102) made from a first GaN-based semico ...


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Ando Yuji, Okamoto Yasuhiro, Ota Kazuki, Inoue Takashi, Nakayama Tatsuo, Miyamoto Hironobu: (en) Semiconductor device(ja) 半導体装置. Nec Corporation, Ando Yuji, Okamoto Yasuhiro, Ota Kazuki, Inoue Takashi, Nakayama Tatsuo, Miyamoto Hironobu, MIYAZAKI Teruoet al, September 17, 2009: WO/2009/113612 (8 worldwide citation)

(EN) Provided is a semiconductor device which has high electron mobility, and superior uniformity and reproducibility of the threshold voltage while reducing the gate leakage current, and can be applied in the enhancement mode. The semiconductor device sequentially deposits a lower barrier layer com ...


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Inoue Takashi, Nakayama Tastuo, Ando Yuji, Miyamoto Hironobu: (Ja) 電界効果トランジスタ、ならびに、該電界効果トランジスタの作製に供される多層エピタキシャル膜, (En) Field-effect transistor and multilayer epitaxial film for use in fabrication of the filed-effect transistor. Nec Corporation, Inoue Takashi, Nakayama Tastuo, Ando Yuji, Miyamoto Hironobu, MIYAZAKI Teruo, December 31, 2008: WO/2009/001888 (7 worldwide citation)

(EN) A group-III nitride-based field-effect transistor exhibiting an improved breakdown voltage achieved by reducing the leak current component caused by conduction by residual carriers in the buffer layer, producing an improved channel electron confinement (carrier confinement) effect, and having a ...


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Okamoto Yasuhiro, Miyamoto Hironobu, Ando Yuji, Nakayama Tatsuo, Inoue Takashi, Kuzuhara Masaaki: (Ja) 電界効果トランジスタ, (En) Field-effect transistor. Nec Corporation, Okamoto Yasuhiro, Miyamoto Hironobu, Ando Yuji, Nakayama Tatsuo, Inoue Takashi, Kuzuhara Masaaki, HAYAMI Shinji, July 22, 2004: WO/2004/061978 (5 worldwide citation)

(EN) An electric-field controlling electrode (5) is formed between a gate electrode (2) and a drain electrode (3). A multilayer film composed of an SiN film (21) and an SiO2 film (22) is formed under the electric-field controlling electrode (5). The SiN film (21) is so formed as to cover the surface ...


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Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori: (Ja) 電界効果トランジスタ, (En) Field effect transistor. Nec Corporation, Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori, MIYAZAKI Teruo, December 14, 2006: WO/2006/132418 (5 worldwide citation)

(EN) There is provided a field effect transistor having both preferable high-voltage operation characteristic and high-frequency characteristic. The field effect transistor (100) includes a first field plate electrode (116) and a second filed plate electrode (118). The second field plate electrode ( ...


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Ando Yuji, Okamoto Yasuhiro, Ota Kazuki, Inoue Takashi, Nakayama Tatsuo, Miyamoto Hironobu: Semiconductor device. Nec Corporation, Ando Yuji, Okamoto Yasuhiro, Ota Kazuki, Inoue Takashi, Nakayama Tatsuo, Miyamoto Hironobu, HAYAMI Shinji, July 2, 2009: WO/2009/081584 (4 worldwide citation)

A semiconductor device is provided with a lower barrier layer (12) composed of a lattice-relaxed AlxGa1-xN (0≤x≤1) layer, and a channel layer (13), which is laminated on the lower barrier layer (12) with a bandgap smaller than that of the lower barrier layer (12) and composed of an InyGa1-yN (0≤y≤1) ...


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Nakayama Tatsuo, Miyamoto Hironobu, Ando Yuji, Inoue Takashi, Okamoto Yasuhiro, Kuzuhara Masaaki: (Ja) 電極、その製造方法およびそれを用いた半導体素子, (En) Electrode, method for producing same and semiconductor device using same. Nec Corporation, Nakayama Tatsuo, Miyamoto Hironobu, Ando Yuji, Inoue Takashi, Okamoto Yasuhiro, Kuzuhara Masaaki, MIYAZAKI Teruo, June 23, 2005: WO/2005/057641 (2 worldwide citation)

(EN) Disclosed is a technology for obtaining an electrode which has a low contact resistance and less surface roughness. Specifically disclosed is an electrode formed on top of a semiconductor film (101) which is characterized in that the electrode comprises a first metal layer (102) and a second me ...


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Okamoto Yasuhiro, Ando Yuji, Miyamoto Hironobu, Nakayama Tatsuo, Inoue Takashi, Kuzuhara Masaaki: (Ja) 電界効果トランジスタ, (En) Field effect transistor. Nec Corporation, Okamoto Yasuhiro, Ando Yuji, Miyamoto Hironobu, Nakayama Tatsuo, Inoue Takashi, Kuzuhara Masaaki, MIYAZAKI Teruo, September 1, 2005: WO/2005/081304 (2 worldwide citation)

(EN) Disclosed is a field effect transistor comprising a semiconductor layer structure including a GaN channel layer (12) and an AlGaN electron supply layer (13), a source electrode (1) and a drain electrode (3) which are so formed on the electron supply layer (13) as to be separated from each other ...


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Okamoto Yasuhiro, Miyamoto Hironobu, Ando Yuji, Nakayama Tatsuo, Inoue Takashi, Kuzuhara Masaaki: (Ja) 電界効果トランジスタ, (En) Field effect transistor. Nec Corporation, Okamoto Yasuhiro, Miyamoto Hironobu, Ando Yuji, Nakayama Tatsuo, Inoue Takashi, Kuzuhara Masaaki, HAYAMI Shinji, July 1, 2004: WO/2004/055905 (1 worldwide citation)

(EN) A gate electrode (2) is provided with a field plate portion (5) which extends toward the drain side like an eave. A multilayer film composed of an SiN film (21) and an SiO2 film (22) is formed under the field plate portion (5). The SiN film (21) is so formed as to cover the surface of an AlGaN ...