1
Ravi Laxman
Ravi Kumar Laxman, David Allen Roberts, Arthur Kenneth Hochberg, Herman Gene Hockenhull, Felicia Diane Kaminsky: Silicon nitride from bis(tertiarybutylamino)silane. Air Products and Chemicals, Geoffrey L Chase, February 23, 1999: US05874368 (75 worldwide citation)

A process for the low pressure chemical vapor deposition of silicon nitride from ammonia and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2 provides improved properties of the resulting film for use in the semiconductor industry.


2
Ravi Laxman
Ravi Kumar Laxman, David Allen Roberts, Arthur Kenneth Hochberg: Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane. Air Products and Chemicals, Geoffrey L Chase, November 2, 1999: US05976991 (46 worldwide citation)

A process for the chemical vapor deposition of silicon dioxide and silicon oxynitride from reactant gases O.sub.2, O.sub.3, N.sub.2 O, NO, NO.sub.2, NH.sub.3 and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2. A process whereby a stack of silicon containing dielectrics ranging from ...


3
Ravi Laxman
Ravi K Laxman, Arthur K Hochberg, David A Roberts, Raymond N Vrtis: Fluorine doped silicon oxide process. Air Products and Chemicals, Geoffrey L Chase, February 20, 1996: US05492736 (25 worldwide citation)

The present invention is a process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ##STR1## wherein at least one of R.sup.1 -R.sup.6 is fluorine and the remaining R groups are independ ...


4
Ravi Laxman
Ravi Kumar Laxman, Arthur Kenneth Hochberg: Low temperature deposition of silicon dioxide using organosilanes. Air Products and Chemicals, Geoffrey L Chase, April 28, 1998: US05744196 (24 worldwide citation)

The present invention is a process for very low temperature chemical vapor deposition of silicon dioxide, comprising the steps of


5
Ravi Laxman
Yin Pang Tsui, Thomas Elwood Zellner, Rajiv K Agarwal, Ravi Kumar Laxman: Process for the production and purification of bis(tertiary-butylamino)silane. Air Products and Chemicals, Rosaleen P Morris Oskanian, November 8, 2005: US06963006 (6 worldwide citation)

A process for synthesizing an aminosilane compound such as bis(tertiarybutylamino)silane is provided. In one aspect of the present invention, there is provided a process for making bis(tertiarybutylamino)silane comprising reacting a stoichiometric excess of tert-butylamine with dichlorosilane under ...


6
David Bohling
Eric Anthony Robertson III, David Arthur Bohling, Mark Allen George, Scott Edward Beck: Gas phase removal of SiO.sub.2 /metals from silicon. Air Products and Chemicals, Geoffrey L Chase, December 12, 2000: US06159859 (4 worldwide citation)

The present invention is a process for thermal, vapor phase removal of silicon oxides and metal-containing contaminants from a surface of a substrate of a type used in manufacturing semiconductor devices comprising contacting the substrate at an elevated temperature at an elevated temperature approp ...


7
Ravi Laxman
Ravi Kumar Laxman: Purification of organosilanes of group 13 (IIIA) and 15 (VA) impurities. Air Products and Chemicals, Geoffrey L Chase, May 11, 1999: US05902893 (2 worldwide citation)

A process for removal of Group 13 and/or 15 elements from an organosilane containing Group 13 and/or 15 elements as contaminants comprising contacting the organosilane with a reagent substantially soluble in the organosilane and capable of forming a complex with the Group 13 and/or Group 15 element ...


8
John Yamamoto
Anthony Rocco Cartolano, Sergei Vladimirovich Ivanov, Cheryl Irene Teich, John Hiroshi Yamamoto: Synthesis of amine boranes. Rohm and Haas Company, Air Products and Chemicals, Kenneth Crimaldi, October 18, 2011: US08039666

A method for preparing an amine borane from an alkali metal borohydride and an amine salt. The alkali metal borohydride is allowed to react with 0.95 to 1.05 equivalents of the amine salt in a solvent which contains water and an amine.


9
Lee J Howard, Howard C Rowles: Low pressure process for C.sub.3.sup.+ liquids recovery from process product gas. Air Products and Chemicals, Willard Jones II, James C Simmons, William F Marsh, March 29, 1988: US04734115 (209 worldwide citation)

The invention provides a liquids recovery process useful for the separation and recovery of C.sub.3.sup.+ liquid hydrocarbons from gas mixtures containing high concentrations of lighter components such as are produced by the dehydrogenation of liquefied petroleum gases or by the catalytic cracking o ...


10
Wayne T McDermott, Richard C Ockovic, Jin J Wu, Douglas W Cooper, Alexander Schwarz, Henry L Wolfe: Surface cleaning using a cryogenic aerosol. Air Products and Chemicals, International Business Machines Corporation, Geoffrey L Chase, James C Simmons, William F Marsh, November 5, 1991: US05062898 (162 worldwide citation)

A method is disclosed for cleaning microelectronics surfaces using an aerosol of at least substantially solid argon particles which impinge upon the surface to be cleaned and then evaporate and the resulting gas is removed by venting along with the contaminants dislodged by the cleaning method.



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