Ravi LaxmanA process for the low pressure chemical vapor deposition of silicon nitride from ammonia and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2 provides improved properties of the resulting film for use in the semiconductor industry.
Ravi LaxmanA process for the chemical vapor deposition of silicon dioxide and silicon oxynitride from reactant gases O.sub.2, O.sub.3, N.sub.2 O, NO, NO.sub.2, NH.sub.3 and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2. A process whereby a stack of silicon containing dielectrics ranging from ...
Ravi LaxmanThe present invention is a process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ##STR1## wherein at least one of R.sup.1 -R.sup.6 is fluorine and the remaining R groups are independ ...
Ravi LaxmanThe present invention is a process for very low temperature chemical vapor deposition of silicon dioxide, comprising the steps of
Ravi LaxmanA process for synthesizing an aminosilane compound such as bis(tertiarybutylamino)silane is provided. In one aspect of the present invention, there is provided a process for making bis(tertiarybutylamino)silane comprising reacting a stoichiometric excess of tert-butylamine with dichlorosilane under ...
David BohlingThe present invention is a process for thermal, vapor phase removal of silicon oxides and metal-containing contaminants from a surface of a substrate of a type used in manufacturing semiconductor devices comprising contacting the substrate at an elevated temperature at an elevated temperature approp ...
Ravi LaxmanA process for removal of Group 13 and/or 15 elements from an organosilane containing Group 13 and/or 15 elements as contaminants comprising contacting the organosilane with a reagent substantially soluble in the organosilane and capable of forming a complex with the Group 13 and/or Group 15 element ...
John YamamotoA method for preparing an amine borane from an alkali metal borohydride and an amine salt. The alkali metal borohydride is allowed to react with 0.95 to 1.05 equivalents of the amine salt in a solvent which contains water and an amine.
The invention provides a liquids recovery process useful for the separation and recovery of C.sub.3.sup.+ liquid hydrocarbons from gas mixtures containing high concentrations of lighter components such as are produced by the dehydrogenation of liquefied petroleum gases or by the catalytic cracking o ...
A method is disclosed for cleaning microelectronics surfaces using an aerosol of at least substantially solid argon particles which impinge upon the surface to be cleaned and then evaporate and the resulting gas is removed by venting along with the contaminants dislodged by the cleaning method.
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