1
Ravi Laxman
Ashutosh Misra, Benjamin J Jurcik Jr, Ravi Laxman: Chemical storage device with integrated load cell. Air Liquide Electronics U S, Patricia E McQueeney, August 10, 2010: US07770448 (4 worldwide citation)

A chemical storage device and a method for monitoring chemical usage are described herein. The device and disclosed method utilize a chemical storage canister and a load cell integrated into one transportable unit. The load cell is capable of compensating for the added weight of attached dispensing ...


2
Ravi Laxman
Ravi Laxman, Ashutosh Misra, Jean Marc Girard: Alkylsilanes as solvents for low vapor pressure precursors. Air Liquide Electronics U S, Brandon Clark, November 13, 2007: US07293569

Compositions and methods for cleaning deposition systems utilizing alkylsilanes are described herein. In an embodiment, a method of cleaning a semiconductor fabrication system comprises flushing the system with a solvent comprising at least one alkylsilane. In another embodiment, a method of removin ...


3
Ravi Laxman
Nathan Stafford, Christian Dussarrat, Olivier Letessier, Ravi K Laxman: Low decomposition storage of a tantalum precursor. Air Liquide Electronics U S, American Air Liquide, Patricia E McQueeney, January 3, 2012: US08088938

Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is plac ...


4
Ravi Laxman
Ziyun Wang, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature CVD of silicon-containing films. Air Liquide Electronics U S, Patricia E McQueeney, January 24, 2012: US08101788

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...


5
Ravi Laxman
Ziyun Wang, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature CVD of silicon-containing films. Air Liquide Electronics U S, Patricia E McQueeney, July 24, 2012: US08227358

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...


6
Ravi Laxman
Ziyun Wang, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature cvd of silicon-containing films. Air Liquide Electronics Us, Air Liquide, Intellectual Property, April 3, 2008: US20080081106-A1

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...


7
Ravi Laxman
Ravi Laxman: Deposition of silicon germanium nitrogen precursors for strain engineering. Air Liquide Electronics Us, Air Liquide, Intellectual Property, June 19, 2008: US20080145978-A1

Methods for making a semiconductor device are disclosed herein. In general, the disclosed methods utilize compounds containing silicon, nitrogen, and germanium. Furthermore, the methods and compositions described are particularly applicable for formation of layers over gate structures or electrodes, ...


8
Ravi Laxman
Ziyun WANG, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature cvd of silicon-containing films. Air Liquide Electronics US, July 14, 2011: US20110171381-A1

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...


9
Jean-luc Dubois
Sylvain Gerard, Nicolas Dupont, Jean Luc Dubois, Serge Tretjak, Nabil Tlili: Method and device for separating gaseous mixtures by means of permeation. Arkema France, L Air Liquide Societe Anonyme Pour L Etude Et L Exploitation Des Procedes Georges Claude, August 23, 2012: US20120210870-A1

The invention relates to a method for purifying a specific gas stream containing one or more components to be recovered, one or more impurities to be eliminated and one or more poisons, for a unit for separation by means of permeation, including the following steps: a) in a unit for separation by me ...


10
Jean-luc Dubois
Christophe Claeys, Alberto Garcia, Sylvain Gerard, Nicolas Dupont, Jean Luc Dubois, Serge Tretjak, Nabil Tlili: Method and device for producing alkene derivatives. Arkema France, L Air Liquide Societe Anonyme Puor L Exploitation des Procedes Georges Claude, November 1, 2012: US20120277464-A1

The invention relates to a method for producing a flow containing at least one alkene derivative, including the following steps: a step a) of reacting a flow containing one or more alkenes and one or more alkanes—the ratio of said alkanes to said alkenes being at least 1 by volume—with a flow contai ...