1
Dah Wen Tsang, John W Mosier II, Douglas A Pike Jr, Theodore O Meyer: Self-aligned power MOSFET device with recessed gate and source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz P C, September 1, 1998: US05801417 (133 worldwide citation)

A recessed gate power MOSFET is formed on a substrate (20) including a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. A trenching protective layer (30) formed on the substrate upper surface (28) is patterned to define exposed areas (46) as stripes or a matrix, and protect ...


2
Dah W Tsang, John W Mosier II, Douglas A Pike Jr, Theodore O Meyer: High density power device fabrication process. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, February 1, 1994: US05283201 (116 worldwide citation)

A recessed gate power MOSFET is formed on a substrate (20) including a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. A trenching protective layer (30) formed on the substrate upper surface (28) is patterned to define exposed areas (46) as stripes or a matrix, and protect ...


3
Douglas A Pike Jr, Dah W Tsang, James M Katana: IGBT process to produce platinum lifetime control. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, November 16, 1993: US05262336 (102 worldwide citation)

For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (.about.10.sup.14 /cm.sup.3) to block reverse bias voltage. The N+ layer is ...


4
Dah Wen Tsang, Dumitru Sdrulla, Douglas A Pike Jr, Theodore O Meyer, John W Mosier II deceased: High density power device fabrication process using undercut oxide sidewalls. Advanced Power Technology, Marger Johnson McCollom & Stolowitz P C, July 15, 1997: US05648283 (84 worldwide citation)

A gate power MOSFET on substrate (20) has a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. Layer (430) on surface (28) patterns areas (446) as stripes or a matrix, and protected areas. Undercut sidewalls (444) of thickness (452), with protruding rims (447), contact the si ...


5
Theodore O Meyer, John W Mosier II, Douglas A Pike Jr, Theodore G Hollinger, Dah W Tsang: Method of making topographic pattern delineated power MOSFET with profile tailored recessed source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, May 28, 1991: US05019522 (54 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...


6
Theodore O Meyer, John W Mosier II, Douglas A Pike Jr, Theodore G Hollinger: Iopographic pattern delineated power mosfet with profile tailored recessed source. Advanced Power Technology, Marger & Johnson, January 23, 1990: US04895810 (52 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...


7
Arthur B Salander, Douglas C Fortner: Device for predicting imminent failure of a stationary lead acid battery in a float mode. Advanced Power Technology, Alfred M Walker, October 5, 1993: US05250904 (47 worldwide citation)

A stationary battery testing device as provided for measuring imminent battery failure while the battery is in a float mode. The device includes a circuitry for measuring the internal resistance changes of a battery and then comparing them over a predetermined duration of time so as to provide audib ...


8
Douglas A Pike Jr, Dah W Tsang, James M Katana, Dumitru Sdrulla: IGBT device with platinum lifetime control and reduced gaw. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, June 18, 1996: US05528058 (46 worldwide citation)

For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (.about.10.sup.14 /cm.sup.3) to block reverse bias voltage. The N+ layer is ...


9
Theodore O Meyer, John W Mosier II, Douglas A Pike Jr, Theodore G Hollinger, Dah W Tsang: Topographic pattern delineated power MOSFET with profile tailored recessed source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, September 3, 1991: US05045903 (46 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...


10
Stanley J Klodzinski: Power MOS device with asymmetrical channel structure for enhanced linear operation capability. Advanced Power Technology, Marger Johnson & McCollom P C, January 7, 2003: US06503786 (32 worldwide citation)

A power MOSFET type device, which can include an IGBT or other VDMOS device having similar forward transfer characteristics, is formed with an asymmetrical channel, to produce different gate threshold voltage characteristics in different parts of the device. The different gate threshold voltage char ...