1
Bin Yu, Judy Xilin An, Cyrus E Tabery, Haihong Wang: Method for forming multiple structures in a semiconductor device. Advanced Micro Devices, Harrity & Snyder, March 16, 2004: US06706571 (450 worldwide citation)

A method of forming multiple structures in a semiconductor device includes depositing a film over a conductive layer, etching a trench in a portion of the film and forming adjacent the sidewalls of the trench. The film may then be etched, followed by an of the conductive layer to form the structures ...


2
Chiu Ting, Valery Dubin: Plated copper interconnect structure. Advanced Micro Devices, October 19, 1999: US05969422 (360 worldwide citation)

A high conductivity interconnect structure is formed by electroplating or electroless plating of Cu or a Cu-base alloy on a seed layer comprising an alloy of a catalytically active metal, such as Cu, and a refractory metal, such as Ta. The seed layer also functions as a barrier/adhesion layer for th ...


3
Phan Khoi A, Rangarajan Bharath, Singh Bhanwar, Subramanian Ramkumar: Refractive index system monitor and control for immersion lithography. Advanced Micro Devices, Phan Khoi A, Rangarajan Bharath, Singh Bhanwar, Subramanian Ramkumar, COLLOPY Daniel R, March 3, 2005: WO/2005/019935 (328 worldwide citation)

A system and/or method are disclosed for measuring (250) and/or controlling (260) refractive index (n) and/or lithographic constant (k) of an immersion medium (210) utilized in connection with immersion lithography. A known grating structure (602) is built upon a substrate (220). A refractive index ...


4
Levinson Harry J: Method for monitoring and controlling imaging in immersion lithography systems. Advanced Micro Devices, Levinson Harry J, sCOLLOPY Daniel R, February 10, 2005: WO/2005/013008 (327 worldwide citation)

A method of monitoring an immersion lithography system (10) in which a wafer (12) can be immersed in a liquid immersion medium (24). The method detects an index of refraction of the immersion medium in a volume of the immersion medium through which an exposure pattern is configured to traverse and d ...


5
Lyons Christopher F, Babcock Carl P, Kye Jongwook: Immersion lithographic process using a conforming immersion medium. Advanced Micro Devices, Lyons Christopher F, Babcock Carl P, Kye Jongwook, DRAKE Paul S, July 7, 2005: WO/2005/062128 (326 worldwide citation)

A method of making a device using a lithographic system (10) having a lens (32) from which an exposure pattern (24) is emitted. A conforming immersion medium (26) can be positioned between a photo resist layer (34) and the lens. The photo resist layer, which can be disposed over a wafer, and the len ...


6
Levinson Harry J: Method and apparatus for monitoring and controlling imaging in immersion lithography systems. Advanced Micro Devices, Levinson Harry J, sCOLLOPY Daniel R, February 24, 2005: WO/2005/017625 (325 worldwide citation)

A method of monitoring an immersion lithography system (10) in which a wafer (12) can be immersed in a liquid immersion medium (22) for exposure by an exposure pattern. The method detects the presence of a foreign body in the immersion medium to thereby determine if the immersion medium in a state t ...


7
Pawloski Adam R, Ado Amr Y, Amblard Gilles R, Lafontaine Bruno M, Lalovic Ivan, Levinson Harry J, Schefske Jeffrey A, Tabery Cyrus E, Tsai Frank: Immersion medium bubble elimination in immersion lithography. Advanced Micro Devices, Pawloski Adam R, Ado Amr Y, Amblard Gilles R, Lafontaine Bruno M, Lalovic Ivan, Levinson Harry J, Schefske Jeffrey A, Tabery Cyrus E, Tsai Frank, sCOLLOPY Daniel R, March 10, 2005: WO/2005/022266 (325 worldwide citation)

A method of operating an immersion lithography system (26), including steps of immersing at least a portion of a wafer (12) to be exposed in an immersion medium (24), wherein the immersion medium comprises at least one bubble (28); directing an ultrasonic wave (36) through at least a portion of the ...


8
Bin Yu: Method of forming a double gate transistor having an epitaxial silicon/germanium channel region. Advanced Micro Devices, Foley & Lardner, November 5, 2002: US06475869 (323 worldwide citation)

A method of manufacturing an integrated circuit with a channel region containing germanium. The method can provide a double planar gate structure. The gate structure can be provided over lateral sidewalls of channel region. The semiconductor material containing germanium can increase the charge mobi ...


9
Robert S Turnbull: Computer-based method and system for product development. Advanced Micro Devices, Skjerven Morrill MacPherson Franklin & Friel, May 4, 1993: US05208765 (284 worldwide citation)

A method and structure for monitoring product development is provided. In accordance with the method of this invention the product development is divided into a plurality of stages. Each stage in turn includes a set of requirements which must be completed in order for the stage to be completed. Each ...


10
William M Johnson: System for reducing delay for execution subsequent to correctly predicted branch instruction using fetch information stored with each block of instructions in cache. Advanced Micro Devices, Foley & Lardner, August 4, 1992: US05136697 (269 worldwide citation)

A super-scaler processor is disclosed wherein branch-prediction information is provided within an instruction cache memory. Each instruction cache block stored in the instruction cache memory includes branch-prediction information fields in addition to instruction fields, which indicate the address ...



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