1
Richard K Williams: High-efficiency DC/DC voltage converter including capacitive switching pre-converter and down inductive switching post-regulator. Advanced Analogic Technologies, Patentability Associates, August 17, 2010: US07777459 (123 worldwide citation)

A DC/DC converter includes a pre-converter stage, which may include a charge pump, and a post-regulator stage, which may include a Buck converter. The duty factor of the post-regulator stage is controlled by a feedback path that extends from the output terminal of the DC/DC converter to an input ter ...


2
Richard K Williams, Wayne B Grabowski: Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses. Advanced Analogic Technologies, David E Steuber, Skjerven Morrill MacPherson, September 18, 2001: US06291298 (121 worldwide citation)

The a trench semiconductor device such as a power MOSFET the high electric field at the corner of the trench is diminished by increasing the thickness of the gate oxide layer at the bottom of the trench. Several processes for manufacturing such devices are described. In one group of processes a dire ...


3
Richard K Williams, Michael E Cornell, Wai Tien Chan: Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology. Advanced Analogic Technologies, Advanced Analogic Technologies, Silicon Valley Patent Group, February 15, 2005: US06855985 (105 worldwide citation)

A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact ...


4
Richard K Williams, Wayne Grabowski: Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer. Advanced Analogic Technologies, David Millers, July 2, 2002: US06413822 (86 worldwide citation)

A novel super-self-aligned (SSA) structure and manufacturing process uses a single photomasking layer to define critical features and dimensions of a trench-gated vertical power DMOSFET. The single critical mask determines the trench surface dimension, the silicon source-body mesa width between tren ...


5
Richard K Williams, Michael E Cornell, Wai Tien Chan: Isolated complementary MOS devices in epi-less substrate. Advanced Analogic Technologies, Silicon Valley Patent Group, May 31, 2005: US06900091 (67 worldwide citation)

An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does not diffuse significantly. As a r ...


6
Richard K Williams, Michael E Cornell, Wai Tien Chan: Trench power MOSFET with planarized gate bus. Advanced Analogic Technologies, Advanced Analogic Technologies, David T Millers, March 1, 2005: US06861701 (58 worldwide citation)

Power MOSFETs and fabrication processes for power MOSFETs use a continuous conductive gate structure within trenches to avoid problems arising from device topology caused when a gate bus extends above a substrate surface. The conductive gate structure forms gates in device trenches in an active devi ...


7
Richard K Williams: High-efficiency DC/DC voltage converter including up inductive switching pre-regulator and capacitive switching post-converter. Advanced Analogic Technologies, Patentability Associates, August 31, 2010: US07786712 (50 worldwide citation)

A DC/DC converter includes a pre-regulator stage, which may include a boost converter, and a post-converter stage, which may include a charge pump. The duty factor of the pre-regulator stage is controlled by a feedback path that extends from the output terminal of the pre-regulator stage or the post ...


8
Richard K Williams: High-efficiency DC/DC voltage converter including down inductive switching pre-regulator and capacitive switching post-converter. Advanced Analogic Technologies, Patentability Associates, August 24, 2010: US07782027 (48 worldwide citation)

A DC/DC converter includes a pre-regulator stage, which may include a Buck converter, and a post-converter stage, which may include a charge pump. The duty factor of the pre-regulator stage is controlled by a feedback path that extends from the output terminal of the pre-regulator stage or the post- ...


9
Richard K Williams, Michael E Cornell, Wai Tien Chan: Complementary analog bipolar transistors with trench-constrained isolation diffusion. Advanced Analogic Technologies, Silicon Valley Patent Group, September 13, 2005: US06943426 (43 worldwide citation)

A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices can be spaced more closely togethe ...


10
Richard K Williams, Donald Ray Disney, Jun Wei Chen, Wai Tien Chan, HyungSik Ryu: High-voltage lateral DMOS device. Advanced Analogic Technologies, Advanced Analogic Technologies, Patentability Associates, May 18, 2010: US07719054 (34 worldwide citation)

All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET a ...