An integrated circuit device (600) is provided which includes an active circuit component (604, 804) and a current sensor (602, 802). The active circuit component (604, 804) may be coupled between a first conductive layer (206) and a second conductive layer (210), and is configured to produce a first current. The current sensor (602, 802) is disposed over the active circuit component. The current sensor (602, 802) may comprise a Magnetic Tunnel Junction ('MTJ') core disposed between the first conductive layer (206) and the second conductive layer (210). The MTJ core is configured to sense the first current and produce a second current based on the first current sensed at the MTJ core.

Title
Magnetic tunnel junction current sensors
Application Number
PCT/US2006/041147
Publication Number
2007/053340
Application Date
October 20, 2006
Publication Date
May 10, 2007
Inventor
Zuo Jiang Kai
Salter Eric J
Grynkewich Gregory W
Durlam Mark A
Baird Robert W
Chung Young Sir
Agent
KING Robert L
Assignee
Zuo Jiang Kai
Salter Eric J
Grynkewich Gregory W
Durlam Mark A
Baird Robert W
Chung Young Sir
Freescale Semiconductor
IPC
G11C 11/00
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