WO/2006/102391 is referenced by 7 patents.

Systems and methodologies are provided for temperature compensation of thin film diode voltage levels in memory sensing circuits. The subject invention includes a temperature sensitive bias circuit (408) and an array core (500) with a temperature variable select device (430). The array core (500) can consist of a thin film diode (430) in series with a nanoscale resistive memory cell (440). The temperature sensitive bias circuit (600) can include a thin film diode (630) in series with two resistors (610, 620) and provides a temperature compensating bias voltage (640) to the array core. The thin film diode (630) of the temperature sensitive bias circuit (600) tracks the diode (430) of the array core (500), while the two resistors (610, 620) create a resistive ratio to mimic the effect of temperature and/or process variation(s) on the array core (500). The compensating bias reference voltage (640) is generated by the temperature sensitive bias circuit (600), duplicated by a differential amplifier (450), and utilized to maintain a constant operation voltage level on the nanoscale resistive memory cell (440).

Title
Temperature compensation of thin film diode voltage threshold in memory sensing circuit
Application Number
PCT/US2006/010364
Publication Number
2006/102391
Application Date
March 22, 2006
Publication Date
September 28, 2006
Inventor
Cai Wei Daisy
Bill Colin S
Agent
DRAKE Paul S
Assignee
Cai Wei Daisy
Bill Colin S
Spansion
IPC
G11C 13/02
G11C 07/04
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