WO/2006/055482 is referenced by 11 patents.

The present memory structure includes thereof a first conductor (BL), a second conductor (WL), a resistive memory cell (130) connected to the second conductor (WL), a first diode (134) connected to the resistive memory cell (130) and the first conductor (BL), and oriented in the forward direction from the resistive memory cell (130) to the first conductor (BL), and a second diode (132) connected to the resistive memory cell (130) and the first conductor (BL), in parallel with the first diode (134), and oriented in the reverse direction from the resistive memory cell (130) to the first conductor (BL). The first and second diodes (134, 132) have different threshold voltages.

Title
Diode array architecture for addressing nanoscale resistive memory arrays
Application Number
PCT/US2005/041173
Publication Number
2006/055482
Application Date
November 10, 2005
Publication Date
May 26, 2006
Inventor
Avanzino Steven
Pangrle Suzette K
Cai Wei Daisy
Fang Tzu Ning
Buynoski Matthew
Vanbuskirk Michael A
Bill Colin S
Tripsas Nicholas H
Agent
LAM Christine S
Assignee
Avanzino Steven
Pangrle Suzette K
Cai Wei Daisy
Fang Tzu Ning
Buynoski Matthew
Vanbuskirk Michael A
Bill Colin S
Tripsas Nicholas H
Spansion
IPC
H01L 27/102
H01L 27/10
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