WO/2005/112127 is referenced by 5 patents.

The carrier mobility in transistor channel regions of Si-Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source/drain regions. Other embodiments include applying a high compressively (90) or high tensilely (120) stressed film, after post silicide spacer removal, over gate electrodes (72) and strained Si source/drain regions (71) of P-channel or N-channel transistors, respectively.

Title
Semiconductor device based on si-ge with high stress liner for enhanced channel carrier mobility
Application Number
PCT/US2005/013239
Publication Number
2005/112127
Application Date
April 19, 2005
Publication Date
November 24, 2005
Inventor
Brown David E
Sun Sey Ping
Agent
DRAKE Paul S
Assignee
Brown David E
Sun Sey Ping
Advanced Micro Devices
IPC
H01L 29/78
H01L 29/10
H01L 21/336
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