WO/2005/013370 is referenced by 3 patents.

A pinned photodiode with a surface layer of a first conductivity type laterally displaced from an electrically active area of a gate structure and a charge collection region of a second conductivity type formed by an angled implant is disclosed. The angle of the charge collection region implant may be tailored so that the charge collection region contacts an adjacent edge of the transfer gate of the pixel sensor cell and minimizes, therefore, the gate overlap region and an undesirable barrier potential.

Title
Angled pinned photodiode for high quantum efficiency and method of formation
Application Number
PCT/US2004/022752
Publication Number
2005/013370
Application Date
July 15, 2004
Publication Date
February 10, 2005
Inventor
Rhodes Howard E
Agent
D AMICO Thomas J
Assignee
Rhodes Howard E
Micron Technology
IPC
H01L 27/146
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