One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one dielectric layer over the copper contact, forming at least one via in the dielectric layer to expose at least a portion of the copper contact, forming a polymer material in a lower portion of the via, and forming a top electrode material layer in an upper portion of the via.

Title
Polymer memory device formed in via opening
Application Number
PCT/US2004/014797
Publication Number
2005/010892
Application Date
May 11, 2004
Publication Date
February 3, 2005
Inventor
Oglesby Jane V
Cheung Patrick K
Chang Mark S
Khathuria Ashok M
Ngo Minh Van
Lopatin Sergey D
Subramanian Ramkumar
Lyons Christopher F
Hui Angela T
Okoroanyanwu Uzodinma
Pangrle Suzette K
Buynoski Matthew
Tripsas Nicholas H
Agent
sCOLLOPY Daniel R
Assignee
Oglesby Jane V
Cheung Patrick K
Chang Mark S
Khathuria Ashok M
Ngo Minh Van
Lopatin Sergey D
Subramanian Ramkumar
Lyons Christopher F
Hui Angela T
Okoroanyanwu Uzodinma
Pangrle Suzette K
Buynoski Matthew
Tripsas Nicholas H
Advanced Micro Devices
IPC
H01L 27/00
H01L 21/44
G11C 13/02
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