3673428 is referenced by 33 patents and cites 3 patents.

In a CMOS integrated circuit of the type which includes a diffused P type region in which the N type transistors are formed, a resistor-region is provided by diffusion at the same time as that P type region. A diode having low breakdown is established by forming P+ type regions or N+ type regions in electrical communication with the resistor so that the diode breakdown is effectively dominated by the impurity concentration characteristics of the P+ type or N+ type regions.

Input transient protection for complementary insulated gate field effect transistor integrated circuit device
Application Number
Publication Number
Application Date
September 18, 1970
Publication Date
June 27, 1972
Athanas Terry George
RCA Corporation
H01l 19/00
H01L 27/92
H01L 27/85
H01L 27/07
H01L 27/02
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