3673428 is referenced by 33 patents and cites 3 patents.

In a CMOS integrated circuit of the type which includes a diffused P type region in which the N type transistors are formed, a resistor-region is provided by diffusion at the same time as that P type region. A diode having low breakdown is established by forming P+ type regions or N+ type regions in electrical communication with the resistor so that the diode breakdown is effectively dominated by the impurity concentration characteristics of the P+ type or N+ type regions.

Title
Input transient protection for complementary insulated gate field effect transistor integrated circuit device
Application Number
05/073,343
Publication Number
3673428
Application Date
September 18, 1970
Publication Date
June 27, 1972
Inventor
Athanas Terry George
Assignee
RCA Corporation
IPC
H01l 19/00
H01L 27/92
H01L 27/85
H01L 27/07
H01L 27/02
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