3667009 is referenced by 26 patents and cites 4 patents.

Gate protection is given to a complementary metal oxide semiconductor (CMOS) devices against excessive input voltage transients. An input diode which has a lower breakdown voltage than the gate oxide is attached to the input terminal to protect the gate oxide. The input protect diode is formed by diffusing an N+ region which overlaps both a P tube and an N substrate. The diffusion concentrations between the various regions determine the breakdown voltage of the protection diode. The overlapping relationship of the N+ diffusion over the P- tub and N substrate creates a structure which prevents parasitic NPN action.

Complementary metal oxide semiconductor gate protection diode
Application Number
Publication Number
Application Date
December 28, 1970
Publication Date
May 30, 1972
Rugg James M
H01l 11/14
H03K 17/812
H03K 17/08
H03F 01/52
H01L 27/92
H01L 27/85
H01L 27/07
H01L 27/02
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