The present invention relates to a read-only memory card comprising a coded array of dielectric coated gate electrodes mounted on a nonconductive substrate. The invention also relates to a read-only memory card reader for reading said read-only memory card comprising source electrode-semiconductor material-drain electrode elements on a nonconductive substrate. Field-effect transistors are formed when the read-only memory card is placed on the read-only memory card reader. The field-effect transistors are probed by applying a gate voltage to the coded array of dielectric coated gate electrodes of the read-only memory card and applying a source-drain voltage to each element of the read-only memory card reader. The field-effect transistors, only, will conduct a source-drain current. A source-drain current, which passes through the completed field-effect transistors, is sensed, in order to read the information in the read-only memory card.