3614750 is referenced by 7 patents and cites 2 patents.

The present invention relates to a read-only memory card comprising a coded array of dielectric coated gate electrodes mounted on a nonconductive substrate. The invention also relates to a read-only memory card reader for reading said read-only memory card comprising source electrode-semiconductor material-drain electrode elements on a nonconductive substrate. Field-effect transistors are formed when the read-only memory card is placed on the read-only memory card reader. The field-effect transistors are probed by applying a gate voltage to the coded array of dielectric coated gate electrodes of the read-only memory card and applying a source-drain voltage to each element of the read-only memory card reader. The field-effect transistors, only, will conduct a source-drain current. A source-drain current, which passes through the completed field-effect transistors, is sensed, in order to read the information in the read-only memory card.

Title
Read-only memory circuit
Application Number
04/841,760
Publication Number
3614750
Application Date
July 15, 1969
Publication Date
October 19, 1971
Inventor
Janning John L
Assignee
The National Cash Register Company
IPC
G11c 17/00
H01L 29/00
H01L 27/112
H01L 27/00
G11C 17/12
G11C 17/08
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