3577043 is referenced by 15 patents and cites 2 patents.

A low resistivity impurity barrier prevents inversion layer conduction between a MOSFET protection diode and the source (or drain). Adjusting the spacing and impurity gradient between the impurity barrier and the protection diode results in control over reverse bias breakdown between the diode impurity and the low resistivity barrier, rather than with the substrate, whereby a lower, controlled breakdown voltage may be achieved.

Title
Mosfet with improved voltage breakdown characteristics
Application Number
04/688,766
Publication Number
3577043
Application Date
December 7, 1967
Publication Date
May 4, 1971
Inventor
Cook Robert C
Assignee
United Aircraft Corporation
IPC
H01l 19/00
H01l 11/14
H01L 27/06
H01L 27/02
H01L 29/06
H01L 29/02
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