10084074 is referenced by 1 patents and cites 17 patents.

A compound semiconductor transistor may include a channel layer. The compound semiconductor transistor may also include a dielectric layer on the channel layer. The compound semiconductor transistor may further include a gate. The gate may include a vertical base portion through the dielectric layer and electrically contacting the channel layer. The gate may also include a head portion on the dielectric layer and electrically coupled to the vertical base portion of the gate.

Title
Compound semiconductor field effect transistor gate length scaling
Application Number
15/643815
Publication Number
10084074 (B1)
Application Date
July 7, 2017
Publication Date
September 25, 2018
Inventor
Periannan Chidambaram
San Diego
CA, US
Xia Li
San Diego
CA, US
Gengming Tao
San Diego
CA, US
Bin Yang
San Diego
CA, US
Agent
Seyfarth Shaw
Assignee
QUALCOMM Incorporated
CA, US
IPC
H01L 29/66
H01L 29/778
H01L 29/423
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