09972649 cites 69 patents.

A sensor comprises a substrate; an array of nanowire field effect transistors (NWFETs) formed in said substrate, each of the NWFETs having source, drain and gate terminals; a nanowire coupled between the source terminal and the drain terminal of each NWFET; and a layer of radiation sensitive material disposed over said NWFETs and said nanowires with each of the source, drain and gate terminals configured to be coupled to respective ones of first, second or third reference potentials, wherein each NWFET is configured such that the conductivity between the source and drain changes in response to radiation absorbed in the layer of radiation sensitive material such that the sensor generates an output signal in response to radiation absorbed by the radiation sensitive material.

Title
Nanowire FET imaging system and related techniques
Application Number
15/294914
Publication Number
9972649 (B2)
Application Date
October 17, 2016
Publication Date
May 15, 2018
Inventor
Robert S Langer
Newton
MA, US
Daniel G Anderson
Sudbury
MA, US
Virginia Spanoudaki
Cambridge
MA, US
Agent
Daly Crowley Mofford & Durkee
IPC
H01L 29/06
H01L 27/146
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