09691635 is referenced by 1 patents and cites 207 patents.

A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

Title
Buildup dielectric layer having metallization pattern semiconductor package fabrication method
Application Number
13/679627
Publication Number
9691635 (B1)
Application Date
November 16, 2012
Publication Date
June 27, 2017
Inventor
David Jon Hiner
Chandler
AZ, US
Sukianto Rusli
Phoenix
AZ, US
Ronald Patrick Huemoeller
Chandler
AZ, US
Agent
McAndrews Held & Malloy
IPC
H01L 21/56
H05K 3/30
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