09520303 is referenced by 31 patents and cites 1446 patents.

Methods of selectively etching aluminum and aluminum layers from the surface of a substrate are described. The etch selectively removes aluminum materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon carbon nitride, silicon oxycarbide and/or silicon nitride. The methods include exposing aluminum materials (e.g. aluminum) to remotely-excited chlorine (Cl2) in a substrate processing region. A remote plasma is used to excite the chlorine and a low electron temperature is maintained in the substrate processing region to achieve high etch selectivity. Aluminum oxidation may be broken through using a chlorine-containing precursor or a bromine-containing precursor excited in a plasma or using no plasma-excitation, respectively.

Title
Aluminum selective etch
Application Number
14/460115
Publication Number
9520303 (B2)
Application Date
August 14, 2014
Publication Date
December 13, 2016
Inventor
Nitin K Ingle
San Jose
CA, US
Anchuan Wang
San Jose
CA, US
Xikun Wang
Sunnyvale
CA, US
Agent
Kilpatrick Townsend & Stockton
Assignee
Applied Materials
CA, US
IPC
H01L 21/768
H01L 21/3213
C23F 4/00
H01J 37/32
C23F 1/12
C23F 1/02
H01L 21/02
H01L 21/3065
H01L 21/311
C03C 15/00
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