09454420 is referenced by 6 patents and cites 473 patents.

The various implementations described herein include systems, methods and/or devices that may enhance the reliability with which data can be stored in and read from a memory. The method includes, in response to one or more host read commands, reading data from a set of memory cells in a flash memory array in accordance with a first reading threshold voltage and performing an error correction process on the read data to produce error correction information. The method further includes determining, based on the error correction information, whether to adjust the first reading threshold voltage, and upon determining to adjust the first reading threshold voltage, setting the value of the first reading threshold voltage to a value greater or less than a current value of the first reading threshold voltage. In some implementations, the method further includes initiating a recalibration of the first reading threshold voltage when a predefined condition occurs.

Title
Method and system of reading threshold voltage equalization
Application Number
13/831697
Publication Number
9454420 (B1)
Application Date
March 15, 2013
Publication Date
September 27, 2016
Inventor
Yeuh Yale Ma
Palo Alto
CA, US
Jinagli Zhu
Sunnyvale
CA, US
Seungjune Jeon
Milpitas
CA, US
Ying Yu Tai
Mountain View
CA, US
Agent
Morgan Lewis & Bockius
Assignee
SANDISK TECHNOLOGIES
TX, US
IPC
G11C 16/26
G06F 11/10
G11C 16/34
G06F 11/07
G06F 11/08
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