09406523 is referenced by 38 patents and cites 1254 patents.

A method of etching doped silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using partial remote plasma excitation. The remote plasma excites a fluorine-containing precursor and the plasma effluents created are flowed into a substrate processing region. A hydrogen-containing precursor, e.g. water, is concurrently flowed into the substrate processing region without plasma excitation. The plasma effluents are combined with the unexcited hydrogen-containing precursor in the substrate processing region where the combination reacts with the doped silicon oxide. The plasmas effluents react with the patterned heterogeneous structures to selectively remove doped silicon oxide.

Title
Highly selective doped oxide removal method
Application Number
14/309625
Publication Number
9406523 (B2)
Application Date
June 19, 2014
Publication Date
August 2, 2016
Inventor
Shankar Venkataraman
San Jose
CA, US
Anchuan Wang
San Jose
CA, US
Nitin K Ingle
San Jose
CA, US
Zihui Li
Santa Clara
CA, US
Zhijun Chen
Milpitas
CA, US
Agent
Kilpatrick Townsend & Stockton
Assignee
Applied Materials
CA, US
IPC
H01L 21/70
H01L 21/3213
H01L 21/033
H01L 21/02
H01L 21/311
H01L 21/461
H01L 21/302
C23F 1/00
C03C 25/68
C03C 15/00
B44C 1/22
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