09355856 is referenced by 50 patents and cites 1204 patents.

Methods of producing V-shaped trenches in crystalline substrates are described. The methods involve processing a patterned substrate with etch masking materials defining each side of exposed silicon (100). The exposed silicon (100) is exposed to remotely-excited halogen-containing precursor including chlorine or bromine. The plasma effluents formed from the halogen-containing precursor preferentially remove silicon from all exposed facets other than silicon (111). Etching the crystalline substrates with the plasma effluents produce at least two silicon (111) facets between two adjacent masking elements. Forming the silicon (111) facets may be accelerated by pretreating the crystalline substrates using a halogen-containing precursor locally excited in a biased plasma to initiate the generation of the trench.

Title
V trench dry etch
Application Number
14/485551
Publication Number
9355856 (B2)
Application Date
September 12, 2014
Publication Date
May 31, 2016
Inventor
Nitin K Ingle
San Jose
CA, US
Anchuan Wang
San Jose
CA, US
Xikun Wang
Sunnyvale
CA, US
Agent
Kilpatrick Townsend & Stockton
Assignee
Applied Materials
CA, US
IPC
H01L 21/3065
H01L 21/302
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