09349605 is referenced by 51 patents and cites 1118 patents.

Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

Title
Oxide etch selectivity systems and methods
Application Number
14/821542
Publication Number
9349605 (B1)
Application Date
August 7, 2015
Publication Date
May 24, 2016
Inventor
Son T Nguyen
San Jose
CA, US
Anchuan Wang
San Jose
CA, US
Zhijun Chen
San Jose
CA, US
Lin Xu
Fremont
CA, US
Agent
Kilpatrick Townsend & Stockton
Assignee
Applied Materials
CA, US
IPC
H01L 21/3213
H01L 21/3065
C23C 16/50
C23C 16/455
H01J 37/32
H01L 21/311
H01L 21/302
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