09324576 is referenced by 51 patents and cites 1158 patents.

A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen.

Title
Selective etch for silicon films
Application Number
13/88930
Publication Number
9324576 (B2)
Application Date
April 18, 2011
Publication Date
April 26, 2016
Inventor
Nitin K Ingle
San Jose
CA, US
Anchuan Wang
San Jose
CA, US
Jingchun Zhang
Milpitas
CA, US
Agent
Kilpatrick Townsend & Stockton
Assignee
Applied Materials
CA, US
IPC
H01L 21/311
H01L 21/3065
H01L 21/3213
C23F 3/00
C23F 1/00
C03C 25/68
C03C 15/00
B44C 1/22
H01L 21/461
H01L 21/302
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