09320144 is referenced by 3 patents and cites 440 patents.

A semiconductor socket including a substrate with a plurality of through holes extending from a first surface to a second surface. A plurality of discrete contact members are located in the plurality of the through holes. The plurality of contact members each include a proximal end accessible from the second surface, and a distal end extending above the first surface. At least one dielectric layer is bonded to the second surface of the substrate with recesses corresponding to target circuit geometry. A conductive material deposited in at least a portion of the recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members.

Title
Method of forming a semiconductor socket
Application Number
13/319158
Publication Number
9320144 (B2)
Application Date
June 15, 2010
Publication Date
April 19, 2016
Inventor
James Rathburn
Mound
MN, US
Assignee
HSIO Technologies
MN, US
IPC
H01R 12/52
H05K 3/34
H01R 12/57
H05K 1/14
H05K 3/00
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