09309598 is referenced by 50 patents and cites 1159 patents.

Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

Title
Oxide and metal removal
Application Number
14/288696
Publication Number
9309598 (B2)
Application Date
May 28, 2014
Publication Date
April 12, 2016
Inventor
Benjamin Schmiege
Santa Clara
CA, US
Jeffrey W Anthis
San Jose
CA, US
Nitin K Ingle
San Jose
CA, US
Anchuan Wang
San Jose
CA, US
Jie Liu
Sunnyvale
CA, US
Xikun Wang
Sunnyvale
CA, US
Agent
Kilpatrick Townsend & Stockton
Assignee
Applied Materials
CA, US
IPC
H01L 21/3213
H01J 37/32
C23F 1/12
C03C 15/00
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