09299575 is referenced by 59 patents and cites 1163 patents.

Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a high flow of helium. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with tungsten coating a patterned substrate having high aspect ratio trenches. The plasmas effluents react with exposed surfaces and evenly remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region. Optionally, the methods may include concurrent ion bombardment of the patterned substrate to help remove potentially thicker horizontal tungsten regions, e.g., at the bottom of the trenches or between trenches.

Title
Gas-phase tungsten etch
Application Number
14/215701
Publication Number
9299575 (B2)
Application Date
March 17, 2014
Publication Date
March 29, 2016
Inventor
Sang jin Kim
Santa Clara
CA, US
Anchuan Wang
San Jose
CA, US
Jie Liu
Sunnyvale
CA, US
Xikun Wang
Sunnyvale
CA, US
Seung Park
San Jose
CA, US
Agent
Kilpatrick Townsend & Stockton
Assignee
Applied Materials
CA, US
IPC
H01L 21/3065
H01L 21/302
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