09293568 is referenced by 54 patents and cites 1162 patents.

Embodiments of the present invention may include a semiconductor patterning method involving forming a fin on a substrate, where the fin may have a sloped sidewall. The fin may be characterized by an initial height and a first width measured proximate a midpoint of the initial height. The method may include forming a masking layer above the fin, and the method may involve removing a first portion of the masking layer. The method may include decreasing the first width of the fin while maintaining the initial height.

Title
Method of fin patterning
Application Number
14/164786
Publication Number
9293568 (B2)
Application Date
January 27, 2014
Publication Date
March 22, 2016
Inventor
Jungmin Ko
Fremont
CA, US
Agent
Kilpatrick Townsend & Stockton
Assignee
Applied Materials
CA, US
IPC
H01J 37/32
H01L 21/67
H01L 21/687
H01L 21/683
H01L 21/308
H01L 21/306
H01L 21/02
H01L 29/66
H01L 21/20
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