09287134 is referenced by 54 patents and cites 1150 patents.

Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium oxide. The plasmas effluents react with exposed surfaces and selectively remove titanium oxide while very slowly removing other exposed materials. A direction sputtering pretreatment is performed prior to the remote plasma etch and enables an increased selectivity as well as a directional selectivity. In some embodiments, the titanium oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Title
Titanium oxide etch
Application Number
14/157724
Publication Number
9287134 (B2)
Application Date
January 17, 2014
Publication Date
March 15, 2016
Inventor
Nitin K Ingle
San Jose
CA, US
Anchuan Wang
San Jose
CA, US
Lin Xu
Sunnyvale
CA, US
Xikun Wang
Sunnyvale
CA, US
Agent
Kilpatrick Townsend & Stockton
Assignee
Applied Materials
CA, US
IPC
H01J 37/32
H01L 21/033
H01L 21/311
H01L 21/302
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