09105840 cites 4 patents.

According to embodiments, a semiconductor memory may include: a variable resistance pattern disposed over a substrate and extended in a first direction; first and second structures including a plurality of interlayer dielectric layers and a plurality of conductive layers which are alternately stacked over the substrate, and contacted with one side surface and the other side surface of the variable resistance pattern, respectively, wherein the first stacked structure has a line shape extended in a first direction and the second stacked structure has a pillar shape; and a pillar-shaped conductive pattern contacted with one side surface of the second stacked structure, which is not contacted with the variable resistance pattern.

Title
Electronic device and method for fabricating the same
Application Number
14/199915
Publication Number
9105840 (B2)
Application Date
March 6, 2014
Publication Date
August 11, 2015
Inventor
Hyun Kyu Kim
Icheon
KR
Won Ki Ju
Icheon
KR
Hyo June Kim
Icheon
KR
Seung Beom Baek
Icheon
KR
Byung Jick Cho
Icheon
KR
Sung Kyu Min
Icheon
KR
Ja Chun Ku
Icheon
KR
Jong Chul Lee
Icheon
KR
Assignee
SK HYNIX
KR
IPC
G11C 13/00
H01L 43/02
H01L 45/00
G11C 11/34
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