09064816 is referenced by 86 patents and cites 717 patents.

Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.

Title
Dry-etch for selective oxidation removal
Application Number
13/839948
Publication Number
9064816 (B2)
Application Date
March 15, 2013
Publication Date
June 23, 2015
Inventor
Nitin K Ingle
San Jose
CA, US
Anchuan Wang
San Jose
CA, US
Ching Mei Hsu
Stanford
CA, US
Sang jin Kim
Icheon
KR
Weon Young Jung
Icheon
KR
Young S Lee
San Jose
CA, US
Dongqing Yang
San Jose
CA, US
Sang Hyuk Kim
Icheon
KR
Agent
Kilpatrick Townsend & Stockton
Assignee
Applied Materials
CA, US
IPC
H01J 37/32
H01L 21/02
H01L 21/311
B44C 1/22
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