09053788 is referenced by 2 patents and cites 31 patents.

A cross-point memory device including memory cells each includes: a variable resistance element that reversibly changes at least between a low resistance state and a high resistance state; and a current steering element that has nonlinear current-voltage characteristics, and the cross-point memory device comprises a read circuit which includes: a reference voltage generation circuit which comprises at least the current steering element; a differential amplifier circuit which performs current amplification on an output voltage in the reference voltage generation circuit; a feedback controlled bit line voltage clamp circuit which sets the low voltage side reference voltage to increase with an output of the differential amplifier circuit; and a sense amplifier circuit which determines a resistance state of a selected memory cell according to an amount of current flowing through the selected memory cell.

Title
Cross-point variable resistance nonvolatile memory device
Application Number
14/122714
Publication Number
9053788 (B2)
Application Date
March 27, 2013
Publication Date
June 9, 2015
Inventor
Kazuhiko Shimakawa
Osaka
JP
Ryotaro Azuma
Osaka
JP
Agent
Wenderoth Lind & Ponack L
Assignee
Panasonic Intellectual Property Management
JP
IPC
G11C 13/00
G11C 11/00
View Original Source