09023734 is referenced by 84 patents and cites 719 patents.

A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconiā„¢ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

Title
Radical-component oxide etch
Application Number
13/834611
Publication Number
9023734 (B2)
Application Date
March 15, 2013
Publication Date
May 5, 2015
Inventor
Nitin K Ingle
San Jose
CA, US
Anchuan Wang
San Jose
CA, US
Seung Park
Pleasanton
CA, US
Ching Mei Hsu
Stanford
CA, US
Jingchun Zhang
Milpitas
CA, US
Zhijun Chen
Milpitas
CA, US
Agent
Kilpatrick Townsend & Stockton
Assignee
Applied Materials
CA, US
IPC
H01J 37/32
H01L 21/311
H01L 21/302
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