08956980 is referenced by 107 patents and cites 740 patents.

A method of etching silicon nitride on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a nitrogen-and-oxygen-containing precursor. Plasma effluents from two remote plasmas are flowed into a substrate processing region where the plasma effluents react with the silicon nitride. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon nitride while very slowly removing silicon, such as polysilicon. The silicon nitride selectivity results partly from the introduction of fluorine-containing precursor and nitrogen-and-oxygen-containing precursor using distinct (but possibly overlapping) plasma pathways which may be in series or in parallel.

Title
Selective etch of silicon nitride
Application Number
14/89182
Publication Number
8956980 (B1)
Application Date
November 25, 2013
Publication Date
February 17, 2015
Inventor
Shankar Venkataraman
San Jose
CA, US
Nitin K Ingle
San Jose
CA, US
Anchuan Wang
San Jose
CA, US
Zihui Li
Santa Clara
CA, US
Zhijun Chen
Milpitas
CA, US
Agent
Kilpatrick Townsend & Stockton
Assignee
Applied Materials
CA, US
IPC
H01L 21/311
H01L 21/461
H01L 21/302
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