08901528 cites 3 patents.

A PCRAM device and a method of manufacturing the same are provided. The PCRAM device includes a semiconductor substrate, and a PN diode formed on the semiconductor substrate and including a layer interposed therein to suppress thermal diffusion of ions.

Title
Phase-change random access memory and method of manufacturing the same
Application Number
13/715970
Publication Number
8901528 (B2)
Application Date
December 14, 2012
Publication Date
December 2, 2014
Inventor
Jong Chul Lee
Gyeonggi-do
KR
Min Yong Lee
Gyeonggi-do
KR
Jin Ku Lee
Gyeonggi-do
KR
Agent
IP & T Group
Assignee
SK Hynix
KR
IPC
H01L 27/24
H01L 45/00
H01L 29/02
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