08848336 is referenced by 3 patents and cites 21 patents.

A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3− anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3-δ)α-(ABO3-δ-γNγ)1-α. A represents a divalent element, B represents a tetravalent element, γ satisfies 0.005≦γ≦1.0, 1-α satisfies 0.05≦1-α≦0.9, and 1-α is an area ratio between the regions containing rich N3− anions and the matrix of remaining oxide perovskite material.

Title
Perovskite material with anion-controlled dielectric properties, thin film capacitor device, and method for manufacturing the same
Application Number
13/616908
Publication Number
8848336 (B2)
Application Date
September 14, 2012
Publication Date
September 30, 2014
Inventor
Akira Ando
Nagaokakyo
JP
Shinichi Higai
Nagaokakyo
JP
Ivoyl Koutsaroff
Nagaokakyo
JP
Agent
Keating & Bennett
Assignee
Murata Manufacturing
JP
IPC
H01G 7/06
H01L 21/02
C01G 23/00
H01B 3/10
H01L 49/02
H01G 4/06
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