08791003 cites 10 patents.

Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate and forming a gate structure on the semiconductor substrate. The gate includes a high-k dielectric material. In the method, a fluorine-containing liquid is contacted with the high-k dielectric material and fluorine is incorporated into the high-k dielectric material.

Title
Methods for fabricating integrated circuits with fluorine passivation
Application Number
13/529327
Publication Number
8791003 (B2)
Application Date
June 21, 2012
Publication Date
July 29, 2014
Inventor
Robert Binder
Dresden
DE
Elke Erben
Dresden
DE
Dina Triyoso
Dresden
DE
Agent
Ingrassia Fisher & Lorenz P C
Assignee
Globalfoundries
KY
IPC
H01L 21/31
H01L 21/283
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