08723260 is referenced by 30 patents and cites 323 patents.

The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element.

Title
Semiconductor radio frequency switch with body contact
Application Number
12/723257
Publication Number
8723260 (B1)
Application Date
March 12, 2010
Publication Date
May 13, 2014
Inventor
Edward T Spears
Oak Ridge
NC, US
Julio Costa
Oak Ridge
NC, US
Philip Mason
Greensboro
NC, US
Christian Rye Iversen
Vestbjerg
DK
Daniel Charles Kerr
Oak Ridge
NC, US
Michael Carroll
Jamestown
NC, US
Agent
Withrow & Terranova P L L C
Assignee
RF Micro Devices
NC, US
IPC
H01L 21/00
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